FR2304400A1 - Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium - Google Patents
Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de galliumInfo
- Publication number
- FR2304400A1 FR2304400A1 FR7508614A FR7508614A FR2304400A1 FR 2304400 A1 FR2304400 A1 FR 2304400A1 FR 7508614 A FR7508614 A FR 7508614A FR 7508614 A FR7508614 A FR 7508614A FR 2304400 A1 FR2304400 A1 FR 2304400A1
- Authority
- FR
- France
- Prior art keywords
- obtd
- reaction
- monocrystals
- gallium
- gacl3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002601 GaN Inorganic materials 0.000 title abstract 4
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 title abstract 4
- 238000006243 chemical reaction Methods 0.000 title abstract 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 title 2
- 229910021529 ammonia Inorganic materials 0.000 title 1
- 238000005136 cathodoluminescence Methods 0.000 title 1
- 229910005267 GaCl3 Inorganic materials 0.000 abstract 3
- 239000002019 doping agent Substances 0.000 abstract 2
- 150000004820 halides Chemical class 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000010494 dissociation reaction Methods 0.000 abstract 1
- 230000005593 dissociations Effects 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- -1 gallium halide Chemical class 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7508614A FR2304400A1 (fr) | 1975-03-19 | 1975-03-19 | Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7508614A FR2304400A1 (fr) | 1975-03-19 | 1975-03-19 | Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2304400A1 true FR2304400A1 (fr) | 1976-10-15 |
| FR2304400B1 FR2304400B1 (enExample) | 1977-11-18 |
Family
ID=9152783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7508614A Granted FR2304400A1 (fr) | 1975-03-19 | 1975-03-19 | Procede de fabrication par croissance cristalline en phase vapeur de monocristaux de nitrure de gallium |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2304400A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110809A (en) * | 1998-03-26 | 2000-08-29 | Sze; Simon M. | Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer |
-
1975
- 1975-03-19 FR FR7508614A patent/FR2304400A1/fr active Granted
Non-Patent Citations (2)
| Title |
|---|
| "JOURNAL OF THE ELECTROCHEMICAL SOCIETY: SOLID STATE SCIENCE AND TECHNOLOGY". 1972, VOLUME 119, NO.6, PAGES 761-765, ARTICLE "MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH II GAN" PAR V.S.BAN.) * |
| JOURNAL OF CRISTAL GROWTH". 1974, VOLUME 22, PAGES 1-5, ARTICLE "KINETICS OF THE EPITAXIAL GROWTH OF GAN USING GA, HCL AND NH3" PAR A.SHINTANI. * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110809A (en) * | 1998-03-26 | 2000-08-29 | Sze; Simon M. | Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2304400B1 (enExample) | 1977-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |