Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
  • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
  • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L29/42312—Gate electrodes for field effect devices
  • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Applications Claiming Priority (1)

Publications (1)

Family

ID=24215119

Family Applications (1)

Country Status (7)

Cited By (1)

Families Citing this family (1)

Citations (1)

• 1976
  • 1976-02-20 CA CA246,199A patent/CA1074009A/en not_active Expired
  • 1976-02-26 GB GB767629A patent/GB1542288A/en not_active Expired
  • 1976-03-02 NL NL7602155A patent/NL7602155A/en not_active Application Discontinuation
  • 1976-03-02 IT IT7648376A patent/IT1057288B/en active
  • 1976-03-03 JP JP51023028A patent/JPS51112138A/en active Pending
  • 1976-03-03 FR FR7605962A patent/FR2303345A1/en active Pending
  • 1976-03-03 DE DE19762608731 patent/DE2608731A1/en not_active Withdrawn

Patent Citations (1)

Also Published As

Similar Documents

Legal Events