FR2286526A2 - Blocking arrangement for reflected laser beam - has semiconductor plate in path of impinging or reflected laser beam generating charge carriers - Google Patents

Blocking arrangement for reflected laser beam - has semiconductor plate in path of impinging or reflected laser beam generating charge carriers

Info

Publication number
FR2286526A2
FR2286526A2 FR7432861A FR7432861A FR2286526A2 FR 2286526 A2 FR2286526 A2 FR 2286526A2 FR 7432861 A FR7432861 A FR 7432861A FR 7432861 A FR7432861 A FR 7432861A FR 2286526 A2 FR2286526 A2 FR 2286526A2
Authority
FR
France
Prior art keywords
laser beam
reflected laser
impinging
charge carriers
reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7432861A
Other languages
French (fr)
Other versions
FR2286526B2 (en
Inventor
Michel Duchet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7432861A priority Critical patent/FR2286526A2/en
Priority to US05/584,227 priority patent/US4003631A/en
Priority to AU81913/75A priority patent/AU487087B2/en
Priority to DE19752526402 priority patent/DE2526402A1/en
Priority to CA229,534A priority patent/CA1035028A/en
Priority to GB26039/75A priority patent/GB1488454A/en
Priority to JP50074582A priority patent/JPS5113593A/en
Priority to SE7507197A priority patent/SE7507197L/en
Publication of FR2286526A2 publication Critical patent/FR2286526A2/en
Application granted granted Critical
Publication of FR2286526B2 publication Critical patent/FR2286526B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0064—Anti-reflection devices, e.g. optical isolaters

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The reflected laser beam blocking device has a plate (3) of semiconductor material in the path of the impinging or reflected laser beams (F1, F'1) which is transparent to the impinging laser beam (F1). After this laser beam has passed through the plate, charge carriers are generated on one plate side prior to the passage of the reflected laser beam (F'1). The charge carriers are available at this plate side at the moment of impingement of the reflected laser beam on that side. The reflected beam propagates from a target axially aligned with an in opposite direction to the impinging laser beam. Preferably the charge carrier generating means contains a laser generator (4), transmitting a beam (F2) whose quantum energy exceeds the blocked bandwidth of the semiconductor material.
FR7432861A 1974-06-21 1974-09-30 Blocking arrangement for reflected laser beam - has semiconductor plate in path of impinging or reflected laser beam generating charge carriers Granted FR2286526A2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR7432861A FR2286526A2 (en) 1974-09-30 1974-09-30 Blocking arrangement for reflected laser beam - has semiconductor plate in path of impinging or reflected laser beam generating charge carriers
US05/584,227 US4003631A (en) 1974-06-21 1975-06-05 Device for blocking a laser beam
AU81913/75A AU487087B2 (en) 1974-06-21 1975-06-06 Device for blocking a laser beam
DE19752526402 DE2526402A1 (en) 1974-06-21 1975-06-13 BLOCKING DEVICE FOR LASER BEAM
CA229,534A CA1035028A (en) 1974-06-21 1975-06-17 Laser beam blocking device
GB26039/75A GB1488454A (en) 1974-06-21 1975-06-18 Apparatus for blocking a laser beam
JP50074582A JPS5113593A (en) 1974-06-21 1975-06-20 Reezabiimuososhisurusochi
SE7507197A SE7507197L (en) 1974-06-21 1975-06-23 DEVICE FOR BLOCKING A LASER RADIUM.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7432861A FR2286526A2 (en) 1974-09-30 1974-09-30 Blocking arrangement for reflected laser beam - has semiconductor plate in path of impinging or reflected laser beam generating charge carriers

Publications (2)

Publication Number Publication Date
FR2286526A2 true FR2286526A2 (en) 1976-04-23
FR2286526B2 FR2286526B2 (en) 1979-03-16

Family

ID=9143581

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7432861A Granted FR2286526A2 (en) 1974-06-21 1974-09-30 Blocking arrangement for reflected laser beam - has semiconductor plate in path of impinging or reflected laser beam generating charge carriers

Country Status (1)

Country Link
FR (1) FR2286526A2 (en)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
FR2286526B2 (en) 1979-03-16

Similar Documents

Publication Publication Date Title
Prokhorov Molecular amplifier and generator for submillimeter waves♯
ES416224A1 (en) Device for receiving or emitting radiation energy
Williams et al. Direct measurement of hot electron-phonon interactions in GaP
RU97106010A (en) METHOD AND DEVICE FOR FORMING A POWERFUL Coherent ELECTRON BEAM AND GAMMA RADIATION LASER
FR2286526A2 (en) Blocking arrangement for reflected laser beam - has semiconductor plate in path of impinging or reflected laser beam generating charge carriers
FR2275907A1 (en) Blocking arrangement for reflected laser beam - has semiconductor plate in path of impinging or reflected laser beam generating charge carriers
Michel Coherent neutral sheet radiation from pulsars(Coherent neutral sheet radiation from pulsars, examining relationship between pulsation-driving energy source and mechanisms for pulsed emission)
US3346741A (en) Raman light intensity amplifier utilising fluids
US4003631A (en) Device for blocking a laser beam
JPS5214389A (en) Semiconductor laser device
JPS51113468A (en) Solid surface processing system
US4012640A (en) X-ray generator
FR2224765A1 (en)
Dyakonov et al. Optical modulation of electron beam by inverse? erenkov effect
JPS5232347A (en) Wave guide light modulator
FR2331794A1 (en) High speed signal analysing device - uses signal to modulate electron or light beam deflected across charge coupled device
JPS52127086A (en) Uni-directional dfb laser
JPS55121692A (en) Laser generator
JPS52135748A (en) Light scanner
Malvano et al. Some considerations on the possibility of obtaining a quasi-monochromatic polarized photon beam from laser-electron scattering in the storage ring Adone(Quasi-monochromatic polarized photon beam obtained from Compton scattering of gas laser light on high energy electrons circulating in Adone storage ring)
BRODIN et al. Mechanism of generation of laser emission in CdS sub x-CdSe sub 1 sub-x crystals in the presence of two-photon excitation(Generation mechanism of laser emission in cadmium sulfide-cadmium selenide crystals in presence of two-photon excitation at various temperatures)
JPS5265400A (en) Laser machining apparatus
JPS57142613A (en) Wave combining device of optical communication
JPS5593537A (en) Optical recording device
AGOSTINI et al. Luminous intensity emitted by a gas or an alkaline vapor under the effect of a focused laser emission(Luminous intensity emitted at interaction time of focused laser beam with argon of cesium vapor in avalanche and breakdown regions)