FR2286414A1 - Positive resist images of poly-alkenyl ketones - made by irradiation by light or electron beams - Google Patents

Positive resist images of poly-alkenyl ketones - made by irradiation by light or electron beams

Info

Publication number
FR2286414A1
FR2286414A1 FR7525147A FR7525147A FR2286414A1 FR 2286414 A1 FR2286414 A1 FR 2286414A1 FR 7525147 A FR7525147 A FR 7525147A FR 7525147 A FR7525147 A FR 7525147A FR 2286414 A1 FR2286414 A1 FR 2286414A1
Authority
FR
France
Prior art keywords
poly
positive resist
irradiation
light
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7525147A
Other languages
French (fr)
Inventor
Edward Gipstein
Wayne Martin Moreau
Omar U Need Iii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2286414A1 publication Critical patent/FR2286414A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Production of an image on a high-resolution radiation sensitive positive resist material, by comprises (1) applying a film of a poly-(alpha-lower-alkenyl ketone) on a substrate (2) irradiating in a pre-determined pattern, and (3) treating the film with a solvent for the breakdown product formed in the irradiated areas. Used in mfr. of integrated printed circuits, printing plates etc. Post hardening of the photo-resist image is not required. The image has a high resolution, below the film thickness e.g. 0.5 um lines with the same separation can be obtained in 1 um films.
FR7525147A 1974-09-26 1975-08-07 Positive resist images of poly-alkenyl ketones - made by irradiation by light or electron beams Withdrawn FR2286414A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50959474A 1974-09-26 1974-09-26

Publications (1)

Publication Number Publication Date
FR2286414A1 true FR2286414A1 (en) 1976-04-23

Family

ID=24027317

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7525147A Withdrawn FR2286414A1 (en) 1974-09-26 1975-08-07 Positive resist images of poly-alkenyl ketones - made by irradiation by light or electron beams

Country Status (3)

Country Link
JP (1) JPS5148279A (en)
DE (1) DE2536299A1 (en)
FR (1) FR2286414A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2847764A1 (en) * 1977-11-04 1979-05-10 Tokyo Ohka Kogyo Co Ltd METHOD OF FORMING AN ULTRA FINE PATTERN BY UV EXPOSURE
DE2911286A1 (en) * 1978-03-22 1979-10-04 Tokyo Ohka Kogyo Co Ltd LIGHT-SENSITIVE COMPOSITIONS
EP0061689A1 (en) * 1981-03-27 1982-10-06 Hitachi, Ltd. Radiation sensitive polymer materials
EP0154932A2 (en) * 1984-03-09 1985-09-18 Hewlett-Packard Company Multilayer photoresist process

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5359367A (en) * 1976-11-10 1978-05-29 Hitachi Ltd Formation of electron beam resist image
JPS5475989A (en) * 1977-11-30 1979-06-18 Hitachi Ltd Pattern production method
JPS5511301A (en) * 1978-06-12 1980-01-26 Fujitsu Ltd Method of forming fine pattern
JPS63291053A (en) * 1987-05-25 1988-11-28 Nippon Zeon Co Ltd Positive type photoresist composition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2847764A1 (en) * 1977-11-04 1979-05-10 Tokyo Ohka Kogyo Co Ltd METHOD OF FORMING AN ULTRA FINE PATTERN BY UV EXPOSURE
DE2911286A1 (en) * 1978-03-22 1979-10-04 Tokyo Ohka Kogyo Co Ltd LIGHT-SENSITIVE COMPOSITIONS
EP0061689A1 (en) * 1981-03-27 1982-10-06 Hitachi, Ltd. Radiation sensitive polymer materials
EP0154932A2 (en) * 1984-03-09 1985-09-18 Hewlett-Packard Company Multilayer photoresist process
EP0154932A3 (en) * 1984-03-09 1986-02-05 Hewlett-Packard Company Multilayer photoresist process

Also Published As

Publication number Publication date
DE2536299A1 (en) 1976-04-08
JPS5148279A (en) 1976-04-24

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Legal Events

Date Code Title Description
ST Notification of lapse