FR2275884B1 - - Google Patents
Info
- Publication number
- FR2275884B1 FR2275884B1 FR7519105A FR7519105A FR2275884B1 FR 2275884 B1 FR2275884 B1 FR 2275884B1 FR 7519105 A FR7519105 A FR 7519105A FR 7519105 A FR7519105 A FR 7519105A FR 2275884 B1 FR2275884 B1 FR 2275884B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7408110A NL7408110A (nl) | 1974-06-18 | 1974-06-18 | Halfgeleiderinrichting met complementaire tran- sistorstrukturen en werkwijze ter vervaardiging daarvan. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2275884A1 FR2275884A1 (fr) | 1976-01-16 |
| FR2275884B1 true FR2275884B1 (es) | 1980-10-24 |
Family
ID=19821569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7519105A Granted FR2275884A1 (fr) | 1974-06-18 | 1975-06-18 | Dispositif semi-conducteur avec des structures de transistor complementaires et procede pour la fabrication de ce dispositif |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS5112778A (es) |
| AU (1) | AU499052B2 (es) |
| BE (1) | BE830286A (es) |
| BR (1) | BR7503777A (es) |
| CA (1) | CA1029134A (es) |
| CH (1) | CH588166A5 (es) |
| DE (1) | DE2525529B2 (es) |
| ES (1) | ES438593A1 (es) |
| FR (1) | FR2275884A1 (es) |
| GB (1) | GB1505103A (es) |
| IT (1) | IT1046053B (es) |
| NL (1) | NL7408110A (es) |
| SE (1) | SE407996B (es) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7710164A (nl) * | 1977-09-16 | 1979-03-20 | Philips Nv | Werkwijze ter behandeling van een eenkristal- lijn lichaam. |
| US4159915A (en) * | 1977-10-25 | 1979-07-03 | International Business Machines Corporation | Method for fabrication vertical NPN and PNP structures utilizing ion-implantation |
| US4232328A (en) * | 1978-12-20 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
| GB2060252B (en) * | 1979-09-17 | 1984-02-22 | Nippon Telegraph & Telephone | Mutually isolated complementary semiconductor elements |
| JPS57204898A (en) * | 1981-06-02 | 1982-12-15 | Saito Masayasu | Pump for vessel for dividing liquid little by little |
| JP2531824Y2 (ja) * | 1987-02-13 | 1997-04-09 | 株式会社 神崎高級工機製作所 | 油圧クラツチ式変速装置 |
| JPS63142451U (es) * | 1987-03-12 | 1988-09-20 | ||
| US5070382A (en) * | 1989-08-18 | 1991-12-03 | Motorola, Inc. | Semiconductor structure for high power integrated circuits |
| US7076124B2 (en) * | 2002-12-20 | 2006-07-11 | Avago Technologies, Ltd. | Integrated multichannel laser driver and photodetector receiver |
| EP4372792A1 (en) * | 2022-11-16 | 2024-05-22 | Infineon Technologies Dresden GmbH & Co . KG | Semiconductor device |
-
1974
- 1974-06-18 NL NL7408110A patent/NL7408110A/xx not_active Application Discontinuation
-
1975
- 1975-05-21 GB GB21807/75A patent/GB1505103A/en not_active Expired
- 1975-06-07 DE DE19752525529 patent/DE2525529B2/de not_active Withdrawn
- 1975-06-11 CA CA229,060A patent/CA1029134A/en not_active Expired
- 1975-06-13 CH CH771075A patent/CH588166A5/xx not_active IP Right Cessation
- 1975-06-13 IT IT24362/75A patent/IT1046053B/it active
- 1975-06-16 JP JP50072123A patent/JPS5112778A/ja active Granted
- 1975-06-16 BE BE157368A patent/BE830286A/xx unknown
- 1975-06-16 ES ES438593A patent/ES438593A1/es not_active Expired
- 1975-06-16 SE SE7506878A patent/SE407996B/xx unknown
- 1975-06-16 BR BR4859/75A patent/BR7503777A/pt unknown
- 1975-06-17 AU AU82149/75A patent/AU499052B2/en not_active Expired
- 1975-06-18 FR FR7519105A patent/FR2275884A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU8214975A (en) | 1976-12-23 |
| CH588166A5 (es) | 1977-05-31 |
| DE2525529B2 (de) | 1977-08-04 |
| BE830286A (fr) | 1975-12-16 |
| AU499052B2 (en) | 1979-04-05 |
| SE407996B (sv) | 1979-04-30 |
| BR7503777A (pt) | 1976-07-06 |
| CA1029134A (en) | 1978-04-04 |
| GB1505103A (en) | 1978-03-22 |
| JPS5112778A (en) | 1976-01-31 |
| FR2275884A1 (fr) | 1976-01-16 |
| SE7506878L (sv) | 1975-12-19 |
| DE2525529A1 (de) | 1976-01-08 |
| ES438593A1 (es) | 1977-01-16 |
| JPS5247319B2 (es) | 1977-12-01 |
| IT1046053B (it) | 1980-06-30 |
| NL7408110A (nl) | 1975-12-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| DR | Decision of the appeal court due to an appeal at law against decisions of the director of the inpi, except decision of lapse | ||
| ST | Notification of lapse |