FR2272485B1 - - Google Patents
Info
- Publication number
- FR2272485B1 FR2272485B1 FR7510342A FR7510342A FR2272485B1 FR 2272485 B1 FR2272485 B1 FR 2272485B1 FR 7510342 A FR7510342 A FR 7510342A FR 7510342 A FR7510342 A FR 7510342A FR 2272485 B1 FR2272485 B1 FR 2272485B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US471401A US3899373A (en) | 1974-05-20 | 1974-05-20 | Method for forming a field effect device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2272485A1 FR2272485A1 (US06174465-20010116-C00003.png) | 1975-12-19 |
| FR2272485B1 true FR2272485B1 (US06174465-20010116-C00003.png) | 1977-04-15 |
Family
ID=23871485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7510342A Expired FR2272485B1 (US06174465-20010116-C00003.png) | 1974-05-20 | 1975-03-25 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3899373A (US06174465-20010116-C00003.png) |
| JP (1) | JPS5826184B2 (US06174465-20010116-C00003.png) |
| FR (1) | FR2272485B1 (US06174465-20010116-C00003.png) |
| GB (1) | GB1453270A (US06174465-20010116-C00003.png) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1089298B (it) * | 1977-01-17 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| JPS53124084A (en) * | 1977-04-06 | 1978-10-30 | Hitachi Ltd | Semiconductor memory device containing floating type poly silicon layer and its manufacture |
| US4128439A (en) * | 1977-08-01 | 1978-12-05 | International Business Machines Corporation | Method for forming self-aligned field effect device by ion implantation and outdiffusion |
| US4277881A (en) * | 1978-05-26 | 1981-07-14 | Rockwell International Corporation | Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
| JPS5552265A (en) * | 1978-10-11 | 1980-04-16 | Seiko Epson Corp | Manufacturing of metal oxide semiconductor integrated circuit |
| US4170500A (en) * | 1979-01-15 | 1979-10-09 | Fairchild Camera And Instrument Corporation | Process for forming field dielectric regions in semiconductor structures without encroaching on device regions |
| DE2902665A1 (de) * | 1979-01-24 | 1980-08-07 | Siemens Ag | Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie |
| US4299024A (en) * | 1980-02-25 | 1981-11-10 | Harris Corporation | Fabrication of complementary bipolar transistors and CMOS devices with poly gates |
| US4628589A (en) * | 1984-09-28 | 1986-12-16 | Texas Instruments Incorporated | Method for fabricating stacked CMOS structures |
| KR920004366B1 (ko) * | 1989-09-08 | 1992-06-04 | 현대전자산업 주식회사 | 반도체 장치의 자기 정렬 콘택 제조방법 |
| JPH03286536A (ja) * | 1990-04-03 | 1991-12-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US5612260A (en) * | 1992-06-05 | 1997-03-18 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
| US6255200B1 (en) | 1999-05-17 | 2001-07-03 | International Business Machines Corporation | Polysilicon structure and process for improving CMOS device performance |
| US7179691B1 (en) * | 2002-07-29 | 2007-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for four direction low capacitance ESD protection |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3479237A (en) * | 1966-04-08 | 1969-11-18 | Bell Telephone Labor Inc | Etch masks on semiconductor surfaces |
| US3544399A (en) * | 1966-10-26 | 1970-12-01 | Hughes Aircraft Co | Insulated gate field-effect transistor (igfet) with semiconductor gate electrode |
| US3660735A (en) * | 1969-09-10 | 1972-05-02 | Sprague Electric Co | Complementary metal insulator silicon transistor pairs |
| US3699646A (en) * | 1970-12-28 | 1972-10-24 | Intel Corp | Integrated circuit structure and method for making integrated circuit structure |
| JPS53674B2 (US06174465-20010116-C00003.png) * | 1971-12-23 | 1978-01-11 | ||
| US3771218A (en) * | 1972-07-13 | 1973-11-13 | Ibm | Process for fabricating passivated transistors |
-
1974
- 1974-05-20 US US471401A patent/US3899373A/en not_active Expired - Lifetime
-
1975
- 1975-03-25 FR FR7510342A patent/FR2272485B1/fr not_active Expired
- 1975-04-08 JP JP50041918A patent/JPS5826184B2/ja not_active Expired
- 1975-04-30 GB GB1791175A patent/GB1453270A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50159682A (US06174465-20010116-C00003.png) | 1975-12-24 |
| FR2272485A1 (US06174465-20010116-C00003.png) | 1975-12-19 |
| GB1453270A (en) | 1976-10-20 |
| US3899373A (en) | 1975-08-12 |
| JPS5826184B2 (ja) | 1983-06-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |