FR2254879A1 - - Google Patents

Info

Publication number
FR2254879A1
FR2254879A1 FR7344329A FR7344329A FR2254879A1 FR 2254879 A1 FR2254879 A1 FR 2254879A1 FR 7344329 A FR7344329 A FR 7344329A FR 7344329 A FR7344329 A FR 7344329A FR 2254879 A1 FR2254879 A1 FR 2254879A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7344329A
Other languages
French (fr)
Other versions
FR2254879B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cegelec SA
Original Assignee
Cegelec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cegelec SA filed Critical Cegelec SA
Priority to FR7344329A priority Critical patent/FR2254879B1/fr
Priority to BE150718A priority patent/BE822433A/en
Priority to IT3024274A priority patent/IT1030873B/en
Priority to GB5293774A priority patent/GB1488860A/en
Priority to DE2458410A priority patent/DE2458410C2/en
Priority to NL7416194A priority patent/NL7416194A/en
Publication of FR2254879A1 publication Critical patent/FR2254879A1/fr
Application granted granted Critical
Publication of FR2254879B1 publication Critical patent/FR2254879B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
FR7344329A 1973-12-12 1973-12-12 Expired FR2254879B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7344329A FR2254879B1 (en) 1973-12-12 1973-12-12
BE150718A BE822433A (en) 1973-12-12 1974-11-20 FOR A PRESS-CONTACT SEMICONDUCTOR POWER SUPPLY DEVICE
IT3024274A IT1030873B (en) 1973-12-12 1974-12-06 PROCEDURE FOR REALIZATION OF A SEMICONDUCTIVE POWER DEVICE WITH PRESSED CONTACTS
GB5293774A GB1488860A (en) 1973-12-12 1974-12-06 Method of manufacturing a semiconductor device having pressed contacts
DE2458410A DE2458410C2 (en) 1973-12-12 1974-12-10 Manufacturing method for a semiconductor device
NL7416194A NL7416194A (en) 1973-12-12 1974-12-12 PROCEDURE FOR THE MANUFACTURE OF A POWER SEMI-CONDUCTOR WITH PRESSURE CONTACTS.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7344329A FR2254879B1 (en) 1973-12-12 1973-12-12

Publications (2)

Publication Number Publication Date
FR2254879A1 true FR2254879A1 (en) 1975-07-11
FR2254879B1 FR2254879B1 (en) 1977-09-23

Family

ID=9129097

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7344329A Expired FR2254879B1 (en) 1973-12-12 1973-12-12

Country Status (6)

Country Link
BE (1) BE822433A (en)
DE (1) DE2458410C2 (en)
FR (1) FR2254879B1 (en)
GB (1) GB1488860A (en)
IT (1) IT1030873B (en)
NL (1) NL7416194A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2277435A1 (en) * 1974-07-01 1976-01-30 Siemens Ag THYRISTOR, AND PROCESS FOR ITS MANUFACTURING
EP0077922A2 (en) * 1981-10-23 1983-05-04 Kabushiki Kaisha Toshiba Pressure-applied type semiconductor device
EP0146928A2 (en) * 1983-12-21 1985-07-03 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure
EP0220469A1 (en) * 1985-10-15 1987-05-06 Siemens Aktiengesellschaft Power thyristor
EP0833390A2 (en) * 1996-09-30 1998-04-01 Siemens Aktiengesellschaft Cathode assembly for GTO thyristor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2378354A1 (en) * 1977-01-19 1978-08-18 Alsthom Atlantique PRESS CONTACT POWER SEMICONDUCTOR MANUFACTURING PROCESS
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
DE3232837A1 (en) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A 2-LEVEL METALIZATION FOR SEMICONDUCTOR COMPONENTS, IN PARTICULAR FOR PERFORMANCE SEMICONDUCTOR COMPONENTS LIKE THYRISTORS
DE3840226A1 (en) * 1988-11-29 1990-05-31 Siemens Ag Method for producing self-aligned metallisations for FET

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3525910A (en) * 1968-05-31 1970-08-25 Westinghouse Electric Corp Contact system for intricate geometry devices

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2277435A1 (en) * 1974-07-01 1976-01-30 Siemens Ag THYRISTOR, AND PROCESS FOR ITS MANUFACTURING
EP0077922A2 (en) * 1981-10-23 1983-05-04 Kabushiki Kaisha Toshiba Pressure-applied type semiconductor device
EP0077922A3 (en) * 1981-10-23 1984-05-23 Tokyo Shibaura Denki Kabushiki Kaisha Pressure-applied type semiconductor device
US4500907A (en) * 1981-10-23 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Pressure-applied type semiconductor device
EP0146928A2 (en) * 1983-12-21 1985-07-03 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure
EP0146928A3 (en) * 1983-12-21 1987-08-26 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure
EP0220469A1 (en) * 1985-10-15 1987-05-06 Siemens Aktiengesellschaft Power thyristor
US4868636A (en) * 1985-10-15 1989-09-19 Siemens Aktiengesellschaft Power thyristor
EP0833390A2 (en) * 1996-09-30 1998-04-01 Siemens Aktiengesellschaft Cathode assembly for GTO thyristor
EP0833390B1 (en) * 1996-09-30 2007-03-07 Infineon Technologies AG Cathode arrangement for GTO thyristor

Also Published As

Publication number Publication date
FR2254879B1 (en) 1977-09-23
NL7416194A (en) 1975-06-16
IT1030873B (en) 1979-04-10
DE2458410A1 (en) 1975-06-19
GB1488860A (en) 1977-10-12
BE822433A (en) 1975-05-20
DE2458410C2 (en) 1983-07-28

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