FR2246080A1 - - Google Patents

Info

Publication number
FR2246080A1
FR2246080A1 FR7431815A FR7431815A FR2246080A1 FR 2246080 A1 FR2246080 A1 FR 2246080A1 FR 7431815 A FR7431815 A FR 7431815A FR 7431815 A FR7431815 A FR 7431815A FR 2246080 A1 FR2246080 A1 FR 2246080A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7431815A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732349544 external-priority patent/DE2349544C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2246080A1 publication Critical patent/FR2246080A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
FR7431815A 1973-10-02 1974-09-20 Withdrawn FR2246080A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732349544 DE2349544C3 (de) 1973-10-02 Verfahren zum Herstellen einer Halbleiter-Lumineszenzdiode

Publications (1)

Publication Number Publication Date
FR2246080A1 true FR2246080A1 (fr) 1975-04-25

Family

ID=5894346

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431815A Withdrawn FR2246080A1 (fr) 1973-10-02 1974-09-20

Country Status (10)

Country Link
US (1) US3963537A (fr)
JP (1) JPS5742984B2 (fr)
BE (1) BE820634A (fr)
DK (1) DK517074A (fr)
FR (1) FR2246080A1 (fr)
GB (1) GB1448606A (fr)
IE (1) IE39673B1 (fr)
IT (1) IT1022516B (fr)
LU (1) LU71021A1 (fr)
NL (1) NL7412735A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2152041B (en) 1983-12-22 1987-11-11 Procter & Gamble X-substituted derivatives of carboxylic acids used as peroxygen bleach activators
US5145809A (en) * 1990-12-04 1992-09-08 Millitech Corporation Fabrication of gunn diode semiconductor devices
GB2252871B (en) * 1991-02-16 1994-11-02 Robin Mukerjee Wide surface LED
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
EP1168539B1 (fr) 1999-03-04 2009-12-16 Nichia Corporation Element de laser semiconducteur au nitrure
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device
US3119947A (en) * 1961-02-20 1964-01-28 Clevite Corp Semiconductive electron emissive device
US3343026A (en) * 1963-11-27 1967-09-19 H P Associates Semi-conductive radiation source
US3675064A (en) * 1970-02-16 1972-07-04 Motorola Inc Directed emission light emitting diode

Also Published As

Publication number Publication date
DE2349544B2 (de) 1976-10-21
US3963537A (en) 1976-06-15
IT1022516B (it) 1978-04-20
GB1448606A (en) 1976-09-08
LU71021A1 (fr) 1975-04-17
IE39673L (en) 1975-04-02
IE39673B1 (en) 1978-12-06
DE2349544A1 (de) 1975-04-10
BE820634A (fr) 1975-02-03
JPS5062588A (fr) 1975-05-28
NL7412735A (nl) 1975-04-04
DK517074A (fr) 1975-06-02
JPS5742984B2 (fr) 1982-09-11

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Legal Events

Date Code Title Description
ST Notification of lapse