FR2239768B1 - - Google Patents
Info
- Publication number
- FR2239768B1 FR2239768B1 FR7327929A FR7327929A FR2239768B1 FR 2239768 B1 FR2239768 B1 FR 2239768B1 FR 7327929 A FR7327929 A FR 7327929A FR 7327929 A FR7327929 A FR 7327929A FR 2239768 B1 FR2239768 B1 FR 2239768B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7327929A FR2239768A1 (en) | 1973-07-31 | 1973-07-31 | Improved bipolar planar transistor structure - has a well defined collector region |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7327929A FR2239768A1 (en) | 1973-07-31 | 1973-07-31 | Improved bipolar planar transistor structure - has a well defined collector region |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2239768A1 FR2239768A1 (en) | 1975-02-28 |
FR2239768B1 true FR2239768B1 (en) | 1976-06-18 |
Family
ID=9123375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7327929A Granted FR2239768A1 (en) | 1973-07-31 | 1973-07-31 | Improved bipolar planar transistor structure - has a well defined collector region |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2239768A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
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1973
- 1973-07-31 FR FR7327929A patent/FR2239768A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2239768A1 (en) | 1975-02-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
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ST | Notification of lapse |