FR2237316A1 - - Google Patents

Info

Publication number
FR2237316A1
FR2237316A1 FR7418504A FR7418504A FR2237316A1 FR 2237316 A1 FR2237316 A1 FR 2237316A1 FR 7418504 A FR7418504 A FR 7418504A FR 7418504 A FR7418504 A FR 7418504A FR 2237316 A1 FR2237316 A1 FR 2237316A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7418504A
Other languages
French (fr)
Other versions
FR2237316B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2237316A1 publication Critical patent/FR2237316A1/fr
Application granted granted Critical
Publication of FR2237316B1 publication Critical patent/FR2237316B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H10W10/0125—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
FR7418504A 1973-07-09 1974-05-21 Expired FR2237316B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US377851A US3873372A (en) 1973-07-09 1973-07-09 Method for producing improved transistor devices

Publications (2)

Publication Number Publication Date
FR2237316A1 true FR2237316A1 (enExample) 1975-02-07
FR2237316B1 FR2237316B1 (enExample) 1978-03-31

Family

ID=23490756

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7418504A Expired FR2237316B1 (enExample) 1973-07-09 1974-05-21

Country Status (5)

Country Link
US (1) US3873372A (enExample)
JP (1) JPS5039881A (enExample)
DE (1) DE2430023A1 (enExample)
FR (1) FR2237316B1 (enExample)
GB (1) GB1459040A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2415878A1 (fr) * 1978-01-25 1979-08-24 Western Electric Co Resistance en circuit integre a haute stabilite
EP0076147A3 (en) * 1981-09-30 1985-09-25 Fujitsu Limited Method of producing a semiconductor device comprising an isolation region

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868274A (en) * 1974-01-02 1975-02-25 Gen Instrument Corp Method for fabricating MOS devices with a multiplicity of thresholds on a semiconductor substrate
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
JPS51111085A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor manufucturing process
JPS51124384A (en) * 1975-04-19 1976-10-29 Mostek Corp Method of producing ic
JPS5851427B2 (ja) * 1975-09-04 1983-11-16 株式会社日立製作所 絶縁ゲ−ト型リ−ド・オンリ−・メモリの製造方法
US3975220A (en) * 1975-09-05 1976-08-17 International Business Machines Corporation Diffusion control for controlling parasitic capacitor effects in single FET structure arrays
US4078947A (en) * 1976-08-05 1978-03-14 International Business Machines Corporation Method for forming a narrow channel length MOS field effect transistor
US4064527A (en) * 1976-09-20 1977-12-20 Intersil, Inc. Integrated circuit having a buried load device
NL185376C (nl) * 1976-10-25 1990-03-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US4080718A (en) * 1976-12-14 1978-03-28 Smc Standard Microsystems Corporation Method of modifying electrical characteristics of MOS devices using ion implantation
US4135289A (en) * 1977-08-23 1979-01-23 Bell Telephone Laboratories, Incorporated Method for producing a buried junction memory device
US4145233A (en) * 1978-05-26 1979-03-20 Ncr Corporation Method for making narrow channel FET by masking and ion-implantation
DE2832388C2 (de) * 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
US4319260A (en) * 1979-09-05 1982-03-09 Texas Instruments Incorporated Multilevel interconnect system for high density silicon gate field effect transistors
US4333227A (en) * 1979-11-29 1982-06-08 International Business Machines Corporation Process for fabricating a self-aligned micrometer bipolar transistor device
US4303933A (en) * 1979-11-29 1981-12-01 International Business Machines Corporation Self-aligned micrometer bipolar transistor device and process
US4315781A (en) * 1980-04-23 1982-02-16 Hughes Aircraft Company Method of controlling MOSFET threshold voltage with self-aligned channel stop
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479237A (en) * 1966-04-08 1969-11-18 Bell Telephone Labor Inc Etch masks on semiconductor surfaces
GB1233545A (enExample) * 1967-08-18 1971-05-26
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3717507A (en) * 1969-06-19 1973-02-20 Shibaura Electric Co Ltd Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion
BE759057A (enExample) * 1969-11-19 1971-05-17 Philips Nv
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
3 "ION IMPLANTATION IN MOS PROCESING" M.L. SHOPBELL,PAGES 1-4. *
BOB CRAWFORD, PAGES 85-90.) *
UE US 1972 WESCON TECHNICAL PAPERS, VOL. 16, "PRESENTED AT THE WESTERN ELECTRONIC SHOW AND CONVENTION" 19-22 SEPTEMBRE 1972, SESIN 19 *
UE US ELECRONICS, VOL. 45, NO. 9, 24 AVRIL 1972. "IMPLANTED DEPLETION LOADS, BOOST MOS ARRAYPERFOMANCE *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2415878A1 (fr) * 1978-01-25 1979-08-24 Western Electric Co Resistance en circuit integre a haute stabilite
EP0076147A3 (en) * 1981-09-30 1985-09-25 Fujitsu Limited Method of producing a semiconductor device comprising an isolation region

Also Published As

Publication number Publication date
JPS5039881A (enExample) 1975-04-12
DE2430023A1 (de) 1975-01-30
FR2237316B1 (enExample) 1978-03-31
US3873372A (en) 1975-03-25
GB1459040A (en) 1976-12-22

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Legal Events

Date Code Title Description
ST Notification of lapse