US3892490A
(en)
*
|
1974-03-06 |
1975-07-01 |
Minolta Camera Kk |
Monitoring system for coating a substrate
|
US4018638A
(en)
*
|
1975-08-22 |
1977-04-19 |
North American Philips Corporation |
Method of reducing the thickness of a wafer of fragile material
|
US4015127A
(en)
*
|
1975-10-30 |
1977-03-29 |
Aluminum Company Of America |
Monitoring film parameters using polarimetry of optical radiation
|
US4129781A
(en)
*
|
1976-05-17 |
1978-12-12 |
Doyle W |
Film thickness measuring apparatus and method
|
GB2016678B
(en)
*
|
1978-03-10 |
1982-09-15 |
Asahi Dow Ltd |
Infrared multilayer film thickness measuring method and apparatus
|
JPS5535214A
(en)
*
|
1978-09-04 |
1980-03-12 |
Asahi Chem Ind Co Ltd |
Method and device for film-thickness measurement making use of infrared-ray interference
|
US4308586A
(en)
*
|
1980-05-02 |
1981-12-29 |
Nanometrics, Incorporated |
Method for the precise determination of photoresist exposure time
|
DE3248091A1
(de)
*
|
1982-12-24 |
1984-06-28 |
Leybold-Heraeus GmbH, 5000 Köln |
Messverfahren und fotometeranordnung fuer die herstellung von vielfach-schichtsystemen
|
JPS60127403A
(ja)
*
|
1983-12-13 |
1985-07-08 |
Anritsu Corp |
厚み測定装置
|
GB2153071A
(en)
*
|
1984-01-16 |
1985-08-14 |
Barringer Research Ltd |
Method and apparatus for detecting hydrocarbons on the surface of water
|
US4672196A
(en)
*
|
1984-02-02 |
1987-06-09 |
Canino Lawrence S |
Method and apparatus for measuring properties of thin materials using polarized light
|
DE3516538A1
(de)
*
|
1985-05-08 |
1986-11-13 |
Fa. Carl Zeiss, 7920 Heidenheim |
Verfahren und vorrichtung zur optischen spannungsmessung
|
GB8601176D0
(en)
*
|
1986-01-17 |
1986-02-19 |
Infrared Eng Ltd |
Sensing
|
IE862086L
(en)
*
|
1986-08-05 |
1988-02-05 |
Bramleigh Ass Ltd |
Glass inspection
|
JPH0721406B2
(ja)
*
|
1988-01-29 |
1995-03-08 |
株式会社日立製作所 |
成膜方法
|
US4999014A
(en)
*
|
1989-05-04 |
1991-03-12 |
Therma-Wave, Inc. |
Method and apparatus for measuring thickness of thin films
|
US5129724A
(en)
*
|
1991-01-29 |
1992-07-14 |
Wyko Corporation |
Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample
|
DE4228870C2
(de)
*
|
1992-08-29 |
1997-01-09 |
Inst Halbleiterphysik Gmbh |
Verfahren zum Bestimmen geometrischer Abmessungen an dünnen, optisch transparenten Schichten
|
US5798837A
(en)
|
1997-07-11 |
1998-08-25 |
Therma-Wave, Inc. |
Thin film optical measurement system and method with calibrating ellipsometer
|
US6278519B1
(en)
|
1998-01-29 |
2001-08-21 |
Therma-Wave, Inc. |
Apparatus for analyzing multi-layer thin film stacks on semiconductors
|
US6535779B1
(en)
|
1998-03-06 |
2003-03-18 |
Applied Materials, Inc. |
Apparatus and method for endpoint control and plasma monitoring
|
US6081334A
(en)
|
1998-04-17 |
2000-06-27 |
Applied Materials, Inc |
Endpoint detection for semiconductor processes
|
EP1125314A1
(fr)
|
1998-07-10 |
2001-08-22 |
Applied Materials, Inc. |
Amelioration de la detection de la fin d'operations de fabrication de substrats
|
JP4567828B2
(ja)
*
|
1999-09-14 |
2010-10-20 |
東京エレクトロン株式会社 |
終点検出方法
|
US6252670B1
(en)
*
|
1999-10-29 |
2001-06-26 |
Taiwan Semiconductor Manufacturing Company |
Method for accurately calibrating a constant-angle reflection-interference spectrometer (CARIS) for measuring photoresist thickness
|
US6449038B1
(en)
|
1999-12-13 |
2002-09-10 |
Applied Materials, Inc. |
Detecting a process endpoint from a change in reflectivity
|
JP3852386B2
(ja)
*
|
2002-08-23 |
2006-11-29 |
株式会社島津製作所 |
膜厚測定方法及び膜厚測定装置
|
US6879744B2
(en)
*
|
2003-01-07 |
2005-04-12 |
Georgi A. Atanasov |
Optical monitoring of thin film deposition
|
US6905624B2
(en)
*
|
2003-07-07 |
2005-06-14 |
Applied Materials, Inc. |
Interferometric endpoint detection in a substrate etching process
|
KR100831806B1
(ko)
*
|
2004-04-19 |
2008-05-28 |
아리스트 인스트루먼트, 인크. |
박막 및 cd 측정들을 위한 빔 프로파일 복합 반사율시스템 및 방법
|
US7586622B1
(en)
*
|
2004-12-30 |
2009-09-08 |
E. I. Du Pont De Nemours And Company |
Measuring thickness of a device layer using reflectance and transmission profiles of baseline devices
|
KR20080005190A
(ko)
*
|
2005-03-30 |
2008-01-10 |
마쯔시다덴기산교 가부시키가이샤 |
애싱 장치, 애싱 방법 및 불순물 도핑 장치
|
DE102008021199A1
(de)
|
2008-04-28 |
2009-10-29 |
Focke & Co.(Gmbh & Co. Kg) |
Verfahren und Vorrichtung zum Prüfen von mit Folie umwickelten Zigarettenpackungen
|
ITMI20091790A1
(it)
*
|
2009-10-19 |
2011-04-20 |
Laser Point S R L |
Apparato per l'individuazione del punto finale del processo di incisione laser su celle solari multistrato e relativo metodo.
|
JP6009171B2
(ja)
*
|
2012-02-14 |
2016-10-19 |
東京エレクトロン株式会社 |
基板処理装置
|
TW201543016A
(zh)
*
|
2014-05-06 |
2015-11-16 |
蘋果傑克199有限合夥公司 |
半導體晶圓應力分析
|
CN106595501A
(zh)
*
|
2016-11-25 |
2017-04-26 |
中国科学院长春光学精密机械与物理研究所 |
测量光学薄膜厚度或均匀性的方法
|
CN107514977B
(zh)
*
|
2017-08-31 |
2019-07-09 |
长江存储科技有限责任公司 |
一种监测存储介质厚度异常的方法及装置
|