FR2212660B1 - - Google Patents

Info

Publication number
FR2212660B1
FR2212660B1 FR7347034A FR7347034A FR2212660B1 FR 2212660 B1 FR2212660 B1 FR 2212660B1 FR 7347034 A FR7347034 A FR 7347034A FR 7347034 A FR7347034 A FR 7347034A FR 2212660 B1 FR2212660 B1 FR 2212660B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7347034A
Other languages
French (fr)
Other versions
FR2212660A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Selfoc Co Ltd
Original Assignee
Nippon Selfoc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP184173A external-priority patent/JPS4991386A/ja
Priority claimed from JP833773A external-priority patent/JPS4997582A/ja
Application filed by Nippon Selfoc Co Ltd filed Critical Nippon Selfoc Co Ltd
Publication of FR2212660A1 publication Critical patent/FR2212660A1/fr
Application granted granted Critical
Publication of FR2212660B1 publication Critical patent/FR2212660B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
FR7347034A 1972-12-29 1973-12-28 Expired FR2212660B1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP184173A JPS4991386A (enExample) 1972-12-29 1972-12-29
JP833773A JPS4997582A (enExample) 1973-01-18 1973-01-18

Publications (2)

Publication Number Publication Date
FR2212660A1 FR2212660A1 (enExample) 1974-07-26
FR2212660B1 true FR2212660B1 (enExample) 1981-04-30

Family

ID=26335128

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7347034A Expired FR2212660B1 (enExample) 1972-12-29 1973-12-28

Country Status (4)

Country Link
US (1) US3875532A (enExample)
CA (1) CA1015050A (enExample)
FR (1) FR2212660B1 (enExample)
GB (1) GB1413437A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079339A (en) * 1975-05-17 1978-03-14 Nippon Electric Company, Ltd. Light self-injecting semiconductor laser device
US4025157A (en) * 1975-06-26 1977-05-24 The United States Of America As Represented By The Secretary Of The Navy Gradient index miniature coupling lens
US4426707A (en) 1981-11-09 1984-01-17 Mcdonnell Douglas Corporation Single mode cavity laser
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
GB9804333D0 (en) * 1998-02-27 1998-04-22 Amp Great Britain Device-to-board electrical connector
US6888984B2 (en) 2002-02-28 2005-05-03 Sarnoff Corporation Amorphous silicon alloy based integrated spot-size converter
DE10258745A1 (de) 2002-12-13 2004-07-08 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co.Kg Halbleiterlaservorrichtung, Halbleiterlaserbaustein für eine derartige Halbleiterlaservorrichtung sowie ein Verfahren zur Herstellung einer derartigen Halbleiterlaservorrichtung
JP3719441B2 (ja) * 2003-08-01 2005-11-24 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、光伝達装置
US7473019B2 (en) * 2005-09-29 2009-01-06 Osram Opto Semiconductors Gmbh Lighting apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729253A (en) * 1971-05-28 1973-04-24 Western Electric Co Optical system comprising a single element having a continuously varying index of refraction
BE792045A (fr) * 1971-12-10 1973-03-16 Commissariat Energie Atomique Generateur laser en mode transverse unique
US3790902A (en) * 1972-09-05 1974-02-05 Bell Telephone Labor Inc Fundamental transverse mode operation in solid state lasers
US3838358A (en) * 1973-04-30 1974-09-24 Bell Telephone Labor Inc Laser arrangements including catadioptric elements made from graded-index optical fibers

Also Published As

Publication number Publication date
CA1015050A (en) 1977-08-02
DE2365130A1 (de) 1974-08-08
FR2212660A1 (enExample) 1974-07-26
GB1413437A (en) 1975-11-12
US3875532A (en) 1975-04-01
DE2365130B2 (de) 1977-03-10

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