FR2211759A1 - - Google Patents

Info

Publication number
FR2211759A1
FR2211759A1 FR7341685A FR7341685A FR2211759A1 FR 2211759 A1 FR2211759 A1 FR 2211759A1 FR 7341685 A FR7341685 A FR 7341685A FR 7341685 A FR7341685 A FR 7341685A FR 2211759 A1 FR2211759 A1 FR 2211759A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7341685A
Other versions
FR2211759B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2211759A1 publication Critical patent/FR2211759A1/fr
Application granted granted Critical
Publication of FR2211759B1 publication Critical patent/FR2211759B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7341685A 1972-12-26 1973-11-14 Expired FR2211759B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31790272A 1972-12-26 1972-12-26

Publications (2)

Publication Number Publication Date
FR2211759A1 true FR2211759A1 (fr) 1974-07-19
FR2211759B1 FR2211759B1 (fr) 1977-09-30

Family

ID=23235750

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7341685A Expired FR2211759B1 (fr) 1972-12-26 1973-11-14

Country Status (5)

Country Link
US (1) US3795845A (fr)
JP (1) JPS5734665B2 (fr)
DE (1) DE2359152A1 (fr)
FR (1) FR2211759B1 (fr)
GB (1) GB1413053A (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984860A (en) * 1973-06-04 1976-10-05 International Business Machines Corporation Multi-function LSI wafers
US4202007A (en) * 1978-06-23 1980-05-06 International Business Machines Corporation Multi-layer dielectric planar structure having an internal conductor pattern characterized with opposite terminations disposed at a common edge surface of the layers
DE2938567C2 (de) * 1979-09-24 1982-04-29 Siemens AG, 1000 Berlin und 8000 München Gehäuse für hochintegrierte Schaltkreise
JPS633159Y2 (fr) * 1980-04-23 1988-01-26
US4575744A (en) * 1983-09-16 1986-03-11 International Business Machines Corporation Interconnection of elements on integrated circuit substrate
JPS59161051A (ja) * 1984-02-17 1984-09-11 Hitachi Ltd 半導体装置
US4731643A (en) * 1985-10-21 1988-03-15 International Business Machines Corporation Logic-circuit layout for large-scale integrated circuits
JPH07111971B2 (ja) * 1989-10-11 1995-11-29 三菱電機株式会社 集積回路装置の製造方法
US5185652A (en) * 1991-05-28 1993-02-09 Ncr Corporation Electrical connection between buses on a semiconductor integrated circuit
US5417577A (en) * 1992-09-23 1995-05-23 At&T Corp. Interconnection method and apparatus
JP2807396B2 (ja) * 1993-05-25 1998-10-08 ローム株式会社 半導体装置
US5490040A (en) * 1993-12-22 1996-02-06 International Business Machines Corporation Surface mount chip package having an array of solder ball contacts arranged in a circle and conductive pin contacts arranged outside the circular array
US5491364A (en) * 1994-08-31 1996-02-13 Delco Electronics Corporation Reduced stress terminal pattern for integrated circuit devices and packages
US5834849A (en) * 1996-02-13 1998-11-10 Altera Corporation High density integrated circuit pad structures
US6310398B1 (en) 1998-12-03 2001-10-30 Walter M. Katz Routable high-density interfaces for integrated circuit devices
US6476499B1 (en) 1999-02-08 2002-11-05 Rohm Co., Semiconductor chip, chip-on-chip structure device and assembling method thereof
US6339534B1 (en) * 1999-11-05 2002-01-15 International Business Machines Corporation Compliant leads for area array surface mounted components
JP5214082B2 (ja) * 2001-07-25 2013-06-19 インヴェンサス・コーポレイション 半導体装置
US6762505B2 (en) * 2001-11-29 2004-07-13 Sun Microsystems 150 degree bump placement layout for an integrated circuit power grid
US7750446B2 (en) 2002-04-29 2010-07-06 Interconnect Portfolio Llc IC package structures having separate circuit interconnection structures and assemblies constructed thereof
CN1659810B (zh) * 2002-04-29 2012-04-25 三星电子株式会社 直接连接信号传送系统
US6891272B1 (en) 2002-07-31 2005-05-10 Silicon Pipe, Inc. Multi-path via interconnection structures and methods for manufacturing the same
JP3908134B2 (ja) 2002-09-09 2007-04-25 Idec株式会社 スイッチ装置
US7014472B2 (en) * 2003-01-13 2006-03-21 Siliconpipe, Inc. System for making high-speed connections to board-mounted modules
US6793500B1 (en) 2003-09-18 2004-09-21 International Business Machines Corporation Radial contact pad footprint and wiring for electrical components
US20070210817A1 (en) * 2005-12-30 2007-09-13 Intel Corporation Partitioned multi-die wafer-sort probe card and methods of using same
TWI357647B (en) * 2007-02-01 2012-02-01 Siliconware Precision Industries Co Ltd Semiconductor substrate structure
US20080265428A1 (en) * 2007-04-26 2008-10-30 International Business Machines Corporation Via and solder ball shapes to maximize chip or silicon carrier strength relative to thermal or bending load zero point
KR20140124631A (ko) * 2013-04-17 2014-10-27 삼성전자주식회사 플립 칩 반도체 패키지
KR102245132B1 (ko) * 2014-05-14 2021-04-28 삼성전자 주식회사 트레이스를 가지는 인쇄회로기판 및 볼 그리드 어레이 패키지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1532813A (fr) * 1966-07-29 1968-07-12 Texas Instruments Inc Procédé de conditionnement de dispositifs à semi-conducteurs à connexions multiples et produit résultant de ce procédé
US3440027A (en) * 1966-06-22 1969-04-22 Frances Hugle Automated packaging of semiconductors
GB1259602A (fr) * 1968-01-26 1972-01-05

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466467A (en) * 1966-05-23 1969-09-09 Bell Telephone Labor Inc Solid state switching circuit
US3476992A (en) * 1967-12-26 1969-11-04 Westinghouse Electric Corp Geometry of shorted-cathode-emitter for low and high power thyristor
US3577037A (en) * 1968-07-05 1971-05-04 Ibm Diffused electrical connector apparatus and method of making same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440027A (en) * 1966-06-22 1969-04-22 Frances Hugle Automated packaging of semiconductors
FR1532813A (fr) * 1966-07-29 1968-07-12 Texas Instruments Inc Procédé de conditionnement de dispositifs à semi-conducteurs à connexions multiples et produit résultant de ce procédé
GB1259602A (fr) * 1968-01-26 1972-01-05

Also Published As

Publication number Publication date
DE2359152A1 (de) 1974-06-27
JPS5734665B2 (fr) 1982-07-24
GB1413053A (en) 1975-11-05
US3795845A (en) 1974-03-05
JPS4991767A (fr) 1974-09-02
DE2359152C2 (fr) 1987-07-02
FR2211759B1 (fr) 1977-09-30

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Legal Events

Date Code Title Description
ST Notification of lapse