FR2211757A1 - - Google Patents

Info

Publication number
FR2211757A1
FR2211757A1 FR7346395A FR7346395A FR2211757A1 FR 2211757 A1 FR2211757 A1 FR 2211757A1 FR 7346395 A FR7346395 A FR 7346395A FR 7346395 A FR7346395 A FR 7346395A FR 2211757 A1 FR2211757 A1 FR 2211757A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7346395A
Other versions
FR2211757B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2211757A1 publication Critical patent/FR2211757A1/fr
Application granted granted Critical
Publication of FR2211757B1 publication Critical patent/FR2211757B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7346395A 1972-12-26 1973-12-26 Expired FR2211757B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00317992A US3855690A (en) 1972-12-26 1972-12-26 Application of facet-growth to self-aligned schottky barrier gate field effect transistors

Publications (2)

Publication Number Publication Date
FR2211757A1 true FR2211757A1 (fr) 1974-07-19
FR2211757B1 FR2211757B1 (fr) 1977-06-10

Family

ID=23236161

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7346395A Expired FR2211757B1 (fr) 1972-12-26 1973-12-26

Country Status (6)

Country Link
US (1) US3855690A (fr)
JP (1) JPS5234347B2 (fr)
CA (1) CA985800A (fr)
DE (1) DE2363384A1 (fr)
FR (1) FR2211757B1 (fr)
GB (1) GB1413058A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027903A1 (fr) * 1979-10-26 1981-05-06 International Business Machines Corporation Procédé de fabrication d'un dispositif à barrière redresseuse Schottky sur un semiconducteur en GaAs

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946415A (en) * 1974-08-28 1976-03-23 Harris Corporation Normally off schottky barrier field effect transistor and method of fabrication
US4092660A (en) * 1974-09-16 1978-05-30 Texas Instruments Incorporated High power field effect transistor
US4077111A (en) * 1976-07-14 1978-03-07 Westinghouse Electric Corporation Self-aligned gate field effect transistor and method for making same
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
JPS5722248Y2 (fr) * 1978-02-20 1982-05-14
US4222164A (en) * 1978-12-29 1980-09-16 International Business Machines Corporation Method of fabrication of self-aligned metal-semiconductor field effect transistors
US4178197A (en) * 1979-03-05 1979-12-11 International Business Machines Corporation Formation of epitaxial tunnels utilizing oriented growth techniques
US4210470A (en) * 1979-03-05 1980-07-01 International Business Machines Corporation Epitaxial tunnels from intersecting growth planes
US4389768A (en) * 1981-04-17 1983-06-28 International Business Machines Corporation Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
JPS60117707A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
EP0281335A3 (fr) * 1987-02-28 1988-11-09 Canon Kabushiki Kaisha Procédé pour la fabrication d'un objet en semi-conducteur
JPH01290598A (ja) * 1988-05-17 1989-11-22 Res Dev Corp Of Japan 微細マルチプローブの製造方法
US5585655A (en) * 1994-08-22 1996-12-17 Matsushita Electric Industrial Co., Ltd. Field-effect transistor and method of manufacturing the same
US5869364A (en) * 1996-07-22 1999-02-09 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)
US5940694A (en) * 1996-07-22 1999-08-17 Bozada; Christopher A. Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops
US5976920A (en) * 1996-07-22 1999-11-02 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)
US5796131A (en) * 1996-07-22 1998-08-18 The United States Of America As Represented By The Secretary Of The Air Force Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal
US5698870A (en) * 1996-07-22 1997-12-16 The United States Of America As Represented By The Secretary Of The Air Force High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
US5698900A (en) * 1996-07-22 1997-12-16 The United States Of America As Represented By The Secretary Of The Air Force Field effect transistor device with single layer integrated metal and retained semiconductor masking
US6020226A (en) * 1998-04-14 2000-02-01 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for enhancement mode field-effect transistor
US6066865A (en) * 1998-04-14 2000-05-23 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal enhancement mode field-effect transistor apparatus
US6222210B1 (en) 1998-04-14 2001-04-24 The United States Of America As Represented By The Secretary Of The Air Force Complementary heterostructure integrated single metal transistor apparatus
US6198116B1 (en) 1998-04-14 2001-03-06 The United States Of America As Represented By The Secretary Of The Air Force Complementary heterostructure integrated single metal transistor fabrication method
WO2003015174A2 (fr) * 2001-08-07 2003-02-20 Jan Kuzmik Dispositifs a haute mobilite d'electrons

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967002A (en) * 1961-05-05 1964-08-19 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3639186A (en) * 1969-02-24 1972-02-01 Ibm Process for the production of finely etched patterns
US3678573A (en) * 1970-03-10 1972-07-25 Westinghouse Electric Corp Self-aligned gate field effect transistor and method of preparing
US3746908A (en) * 1970-08-03 1973-07-17 Gen Electric Solid state light sensitive storage array
US3675313A (en) * 1970-10-01 1972-07-11 Westinghouse Electric Corp Process for producing self aligned gate field effect transistor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE ' JOURNAL OF THE ELECTROCHEMICAL SOCIETY', VOL 113, N 9, SEPTEMBRE 1966, *
'SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES', DON. W. SHAW, PAGES 904-908) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0027903A1 (fr) * 1979-10-26 1981-05-06 International Business Machines Corporation Procédé de fabrication d'un dispositif à barrière redresseuse Schottky sur un semiconducteur en GaAs

Also Published As

Publication number Publication date
JPS5234347B2 (fr) 1977-09-02
CA985800A (en) 1976-03-16
FR2211757B1 (fr) 1977-06-10
JPS4991780A (fr) 1974-09-02
GB1413058A (en) 1975-11-05
US3855690A (en) 1974-12-24
DE2363384A1 (de) 1974-06-27

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Legal Events

Date Code Title Description
ST Notification of lapse