FR2204889B1 - - Google Patents

Info

Publication number
FR2204889B1
FR2204889B1 FR7238201A FR7238201A FR2204889B1 FR 2204889 B1 FR2204889 B1 FR 2204889B1 FR 7238201 A FR7238201 A FR 7238201A FR 7238201 A FR7238201 A FR 7238201A FR 2204889 B1 FR2204889 B1 FR 2204889B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7238201A
Other versions
FR2204889A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Original Assignee
Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM filed Critical Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Priority to FR7238201A priority Critical patent/FR2204889B1/fr
Priority to BE136993A priority patent/BE806434A/fr
Priority to DE19732353803 priority patent/DE2353803A1/de
Priority to IT5336273A priority patent/IT994443B/it
Publication of FR2204889A1 publication Critical patent/FR2204889A1/fr
Application granted granted Critical
Publication of FR2204889B1 publication Critical patent/FR2204889B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7238201A 1972-10-27 1972-10-27 Expired FR2204889B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7238201A FR2204889B1 (fr) 1972-10-27 1972-10-27
BE136993A BE806434A (fr) 1972-10-27 1973-10-24 Dispositif semiconducteur a dissipation calorifique elevee
DE19732353803 DE2353803A1 (de) 1972-10-27 1973-10-26 Halbleitervorrichtung mit hohem waermeabfuhrvermoegen
IT5336273A IT994443B (it) 1972-10-27 1973-10-26 Dispositivo semiconduttore a dissipazione calorifica

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7238201A FR2204889B1 (fr) 1972-10-27 1972-10-27

Publications (2)

Publication Number Publication Date
FR2204889A1 FR2204889A1 (fr) 1974-05-24
FR2204889B1 true FR2204889B1 (fr) 1975-03-28

Family

ID=9106334

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7238201A Expired FR2204889B1 (fr) 1972-10-27 1972-10-27

Country Status (4)

Country Link
BE (1) BE806434A (fr)
DE (1) DE2353803A1 (fr)
FR (1) FR2204889B1 (fr)
IT (1) IT994443B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268376A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES364975A1 (es) * 1968-03-22 1971-02-16 Rca Corp Un dispositivo semiconductor.
US3740617A (en) * 1968-11-20 1973-06-19 Matsushita Electronics Corp Semiconductor structure and method of manufacturing same
CA950130A (en) * 1971-04-05 1974-06-25 Rca Corporation Overlay transistor employing highly conductive semiconductor grid and method for making

Also Published As

Publication number Publication date
FR2204889A1 (fr) 1974-05-24
BE806434A (fr) 1974-02-15
IT994443B (it) 1975-10-20
DE2353803A1 (de) 1974-05-09

Similar Documents

Publication Publication Date Title
JPS4963110A (fr)
FR2204889B1 (fr)
JPS4894163U (fr)
JPS4912801A (fr)
JPS5249234Y2 (fr)
JPS5319107Y2 (fr)
JPS5146508B2 (fr)
JPS5425283B2 (fr)
JPS4983955U (fr)
JPS4999631U (fr)
JPS49100588U (fr)
CH563817A5 (fr)
BG21622A1 (fr)
CH574485A5 (fr)
CH574329A5 (fr)
CH573069A5 (fr)
CH572237B5 (fr)
CH569667A5 (fr)
CH569427A5 (fr)
CH569365A5 (fr)
CH567354A5 (fr)
CH566437A (fr)
CH564724A5 (fr)
CH545744A (fr)
CH561414A5 (fr)

Legal Events

Date Code Title Description
ST Notification of lapse