FR2203173A1 - - Google Patents

Info

Publication number
FR2203173A1
FR2203173A1 FR7336465A FR7336465A FR2203173A1 FR 2203173 A1 FR2203173 A1 FR 2203173A1 FR 7336465 A FR7336465 A FR 7336465A FR 7336465 A FR7336465 A FR 7336465A FR 2203173 A1 FR2203173 A1 FR 2203173A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7336465A
Other languages
French (fr)
Other versions
FR2203173B1 (ko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2203173A1 publication Critical patent/FR2203173A1/fr
Application granted granted Critical
Publication of FR2203173B1 publication Critical patent/FR2203173B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR7336465A 1972-10-16 1973-10-12 Expired FR2203173B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722250613 DE2250613A1 (de) 1972-10-16 1972-10-16 Isolierschicht-feldeffekttransistor

Publications (2)

Publication Number Publication Date
FR2203173A1 true FR2203173A1 (ko) 1974-05-10
FR2203173B1 FR2203173B1 (ko) 1977-03-11

Family

ID=5859143

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7336465A Expired FR2203173B1 (ko) 1972-10-16 1973-10-12

Country Status (6)

Country Link
JP (1) JPS4974887A (ko)
AU (1) AU6119673A (ko)
DE (1) DE2250613A1 (ko)
FR (1) FR2203173B1 (ko)
IT (1) IT995581B (ko)
NL (1) NL7314048A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002486A1 (de) * 1977-12-20 1979-06-27 International Business Machines Corporation Statische Speicherzelle aus zwei Feldeffekttransistoren und Verwendung derselben in einem programmierfähigen logischen Schaltungsverband
EP0020164A1 (en) * 1979-05-30 1980-12-10 Xerox Corporation Monolithic HVMOSFET array

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE32071E (en) * 1977-12-20 1986-01-21 International Business Machines Corporation Resistive gate FET flip-flop storage cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1801882A1 (de) * 1967-10-09 1969-05-29 Philco Ford Corp N Ges D St De Halbleiteranordnung vom Feldeffekt-Transistortyp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1801882A1 (de) * 1967-10-09 1969-05-29 Philco Ford Corp N Ges D St De Halbleiteranordnung vom Feldeffekt-Transistortyp

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US "IEEE TRANSACTIONS ON ELECTRON DEVICES", VOL. ED 18, NO. 7, JUILLET 1971, "A RESISTIVE-GATED IGFET TETRODE", CHENMING HU ET AL, PAGES 418-425 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002486A1 (de) * 1977-12-20 1979-06-27 International Business Machines Corporation Statische Speicherzelle aus zwei Feldeffekttransistoren und Verwendung derselben in einem programmierfähigen logischen Schaltungsverband
EP0020164A1 (en) * 1979-05-30 1980-12-10 Xerox Corporation Monolithic HVMOSFET array

Also Published As

Publication number Publication date
JPS4974887A (ko) 1974-07-19
NL7314048A (ko) 1974-04-18
IT995581B (it) 1975-11-20
FR2203173B1 (ko) 1977-03-11
AU6119673A (en) 1975-04-10
DE2250613A1 (de) 1974-04-25

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Legal Events

Date Code Title Description
ST Notification of lapse