FR2200625A1 - - Google Patents

Info

Publication number
FR2200625A1
FR2200625A1 FR7333797A FR7333797A FR2200625A1 FR 2200625 A1 FR2200625 A1 FR 2200625A1 FR 7333797 A FR7333797 A FR 7333797A FR 7333797 A FR7333797 A FR 7333797A FR 2200625 A1 FR2200625 A1 FR 2200625A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7333797A
Other languages
French (fr)
Other versions
FR2200625B1 (US20100223739A1-20100909-C00005.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2200625A1 publication Critical patent/FR2200625A1/fr
Application granted granted Critical
Publication of FR2200625B1 publication Critical patent/FR2200625B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR7333797A 1972-09-21 1973-09-20 Expired FR2200625B1 (US20100223739A1-20100909-C00005.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29097672A 1972-09-21 1972-09-21

Publications (2)

Publication Number Publication Date
FR2200625A1 true FR2200625A1 (US20100223739A1-20100909-C00005.png) 1974-04-19
FR2200625B1 FR2200625B1 (US20100223739A1-20100909-C00005.png) 1979-08-31

Family

ID=23118293

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7333797A Expired FR2200625B1 (US20100223739A1-20100909-C00005.png) 1972-09-21 1973-09-20

Country Status (9)

Country Link
JP (1) JPS4971873A (US20100223739A1-20100909-C00005.png)
BE (1) BE804932A (US20100223739A1-20100909-C00005.png)
CA (1) CA978281A (US20100223739A1-20100909-C00005.png)
DE (1) DE2347067A1 (US20100223739A1-20100909-C00005.png)
FR (1) FR2200625B1 (US20100223739A1-20100909-C00005.png)
GB (1) GB1414066A (US20100223739A1-20100909-C00005.png)
IT (1) IT993337B (US20100223739A1-20100909-C00005.png)
NL (1) NL7312775A (US20100223739A1-20100909-C00005.png)
SE (1) SE391606B (US20100223739A1-20100909-C00005.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543736A1 (fr) * 1983-03-31 1984-10-05 Thomson Csf Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2559800B2 (ja) * 1988-03-25 1996-12-04 株式会社宇宙通信基礎技術研究所 トランジスタの評価方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543736A1 (fr) * 1983-03-31 1984-10-05 Thomson Csf Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture
EP0127488A2 (fr) * 1983-03-31 1984-12-05 Thomson-Csf Procédé de fabrication d'un transistor de puissance à tenue en tension élevée à l'ouverture
EP0127488A3 (en) * 1983-03-31 1986-01-22 Thomson-Csf Method of making a power transistor with open circuit voltage holding properties

Also Published As

Publication number Publication date
CA978281A (en) 1975-11-18
JPS4971873A (US20100223739A1-20100909-C00005.png) 1974-07-11
DE2347067A1 (de) 1974-03-28
IT993337B (it) 1975-09-30
SE391606B (sv) 1977-02-21
GB1414066A (en) 1975-11-12
BE804932A (fr) 1974-01-16
NL7312775A (US20100223739A1-20100909-C00005.png) 1974-03-25
FR2200625B1 (US20100223739A1-20100909-C00005.png) 1979-08-31

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Legal Events

Date Code Title Description
ST Notification of lapse