FR2200625A1 - - Google Patents
Info
- Publication number
- FR2200625A1 FR2200625A1 FR7333797A FR7333797A FR2200625A1 FR 2200625 A1 FR2200625 A1 FR 2200625A1 FR 7333797 A FR7333797 A FR 7333797A FR 7333797 A FR7333797 A FR 7333797A FR 2200625 A1 FR2200625 A1 FR 2200625A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29097672A | 1972-09-21 | 1972-09-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2200625A1 true FR2200625A1 (US06566495-20030520-M00011.png) | 1974-04-19 |
FR2200625B1 FR2200625B1 (US06566495-20030520-M00011.png) | 1979-08-31 |
Family
ID=23118293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7333797A Expired FR2200625B1 (US06566495-20030520-M00011.png) | 1972-09-21 | 1973-09-20 |
Country Status (9)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2543736A1 (fr) * | 1983-03-31 | 1984-10-05 | Thomson Csf | Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2559800B2 (ja) * | 1988-03-25 | 1996-12-04 | 株式会社宇宙通信基礎技術研究所 | トランジスタの評価方法 |
-
1973
- 1973-03-30 CA CA167,643A patent/CA978281A/en not_active Expired
- 1973-09-11 SE SE7312357A patent/SE391606B/xx unknown
- 1973-09-17 BE BE135714A patent/BE804932A/xx unknown
- 1973-09-17 GB GB4346773A patent/GB1414066A/en not_active Expired
- 1973-09-17 NL NL7312775A patent/NL7312775A/xx not_active Application Discontinuation
- 1973-09-19 DE DE19732347067 patent/DE2347067A1/de active Pending
- 1973-09-20 IT IT2917773A patent/IT993337B/it active
- 1973-09-20 FR FR7333797A patent/FR2200625B1/fr not_active Expired
- 1973-09-21 JP JP10607473A patent/JPS4971873A/ja active Pending
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2543736A1 (fr) * | 1983-03-31 | 1984-10-05 | Thomson Csf | Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture |
EP0127488A2 (fr) * | 1983-03-31 | 1984-12-05 | Thomson-Csf | Procédé de fabrication d'un transistor de puissance à tenue en tension élevée à l'ouverture |
EP0127488A3 (en) * | 1983-03-31 | 1986-01-22 | Thomson-Csf | Method of making a power transistor with open circuit voltage holding properties |
Also Published As
Publication number | Publication date |
---|---|
JPS4971873A (US06566495-20030520-M00011.png) | 1974-07-11 |
CA978281A (en) | 1975-11-18 |
BE804932A (fr) | 1974-01-16 |
FR2200625B1 (US06566495-20030520-M00011.png) | 1979-08-31 |
IT993337B (it) | 1975-09-30 |
GB1414066A (en) | 1975-11-12 |
NL7312775A (US06566495-20030520-M00011.png) | 1974-03-25 |
DE2347067A1 (de) | 1974-03-28 |
SE391606B (sv) | 1977-02-21 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |