FR2198265A1 - - Google Patents
Info
- Publication number
- FR2198265A1 FR2198265A1 FR7328191A FR7328191A FR2198265A1 FR 2198265 A1 FR2198265 A1 FR 2198265A1 FR 7328191 A FR7328191 A FR 7328191A FR 7328191 A FR7328191 A FR 7328191A FR 2198265 A1 FR2198265 A1 FR 2198265A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1302972A CH549286A (de) | 1972-09-06 | 1972-09-06 | Halbleiterbauelement. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2198265A1 true FR2198265A1 (US07585860-20090908-C00150.png) | 1974-03-29 |
| FR2198265B3 FR2198265B3 (US07585860-20090908-C00150.png) | 1976-07-16 |
Family
ID=4388662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7328191A Expired FR2198265B3 (US07585860-20090908-C00150.png) | 1972-09-06 | 1973-08-01 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4966080A (US07585860-20090908-C00150.png) |
| CH (1) | CH549286A (US07585860-20090908-C00150.png) |
| DE (2) | DE7235267U (US07585860-20090908-C00150.png) |
| FR (1) | FR2198265B3 (US07585860-20090908-C00150.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2377096A1 (fr) * | 1977-01-07 | 1978-08-04 | Rca Corp | Thyristor semi-conducteur |
| EP0007099A1 (de) * | 1978-07-13 | 1980-01-23 | Licentia Patent-Verwaltungs-GmbH | Thyristor mit Amplifying Gate und Verfahren zur Herstellung |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH578254A5 (US07585860-20090908-C00150.png) * | 1974-12-03 | 1976-07-30 | Bbc Brown Boveri & Cie | |
| SU793421A3 (ru) * | 1976-06-02 | 1980-12-30 | Ббц Аг Браун | Фототиристор |
| JPS5887869A (ja) * | 1981-11-20 | 1983-05-25 | Nec Corp | サイリスタ |
| JPS60143670A (ja) * | 1984-07-28 | 1985-07-29 | Mitsubishi Electric Corp | サイリスタ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501990B1 (US07585860-20090908-C00150.png) * | 1970-06-02 | 1975-01-22 |
-
1972
- 1972-09-06 CH CH1302972A patent/CH549286A/xx not_active IP Right Cessation
- 1972-09-25 DE DE19727235267 patent/DE7235267U/de not_active Expired
- 1972-09-25 DE DE19722247006 patent/DE2247006A1/de not_active Withdrawn
-
1973
- 1973-08-01 FR FR7328191A patent/FR2198265B3/fr not_active Expired
- 1973-08-13 JP JP9080273A patent/JPS4966080A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2377096A1 (fr) * | 1977-01-07 | 1978-08-04 | Rca Corp | Thyristor semi-conducteur |
| EP0007099A1 (de) * | 1978-07-13 | 1980-01-23 | Licentia Patent-Verwaltungs-GmbH | Thyristor mit Amplifying Gate und Verfahren zur Herstellung |
| WO1980000283A1 (en) * | 1978-07-13 | 1980-02-21 | Licentia Gmbh | Thyristor with amplifier gate |
| US4500901A (en) * | 1978-07-13 | 1985-02-19 | Licentia Patent-Verwaltungs-G.M.B.H. | Thyristor having n+ - main and auxiliary emitters and a p+ ring forming a p+ n+ junction with the main emitter |
Also Published As
| Publication number | Publication date |
|---|---|
| CH549286A (de) | 1974-05-15 |
| DE2247006A1 (de) | 1974-05-09 |
| DE7235267U (de) | 1974-08-14 |
| FR2198265B3 (US07585860-20090908-C00150.png) | 1976-07-16 |
| JPS4966080A (US07585860-20090908-C00150.png) | 1974-06-26 |
