FR2191203A1 - - Google Patents

Info

Publication number
FR2191203A1
FR2191203A1 FR7321782A FR7321782A FR2191203A1 FR 2191203 A1 FR2191203 A1 FR 2191203A1 FR 7321782 A FR7321782 A FR 7321782A FR 7321782 A FR7321782 A FR 7321782A FR 2191203 A1 FR2191203 A1 FR 2191203A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7321782A
Other languages
French (fr)
Other versions
FR2191203B1 (US20110009641A1-20110113-C00185.png
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2191203A1 publication Critical patent/FR2191203A1/fr
Application granted granted Critical
Publication of FR2191203B1 publication Critical patent/FR2191203B1/fr
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
FR7321782A 1972-06-30 1973-06-06 Expired FR2191203B1 (US20110009641A1-20110113-C00185.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26782772A 1972-06-30 1972-06-30

Publications (2)

Publication Number Publication Date
FR2191203A1 true FR2191203A1 (US20110009641A1-20110113-C00185.png) 1974-02-01
FR2191203B1 FR2191203B1 (US20110009641A1-20110113-C00185.png) 1976-04-30

Family

ID=23020290

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7321782A Expired FR2191203B1 (US20110009641A1-20110113-C00185.png) 1972-06-30 1973-06-06

Country Status (7)

Country Link
US (1) US3750116A (US20110009641A1-20110113-C00185.png)
JP (1) JPS5440183B2 (US20110009641A1-20110113-C00185.png)
CA (1) CA1019835A (US20110009641A1-20110113-C00185.png)
DE (1) DE2332555A1 (US20110009641A1-20110113-C00185.png)
FR (1) FR2191203B1 (US20110009641A1-20110113-C00185.png)
GB (1) GB1418552A (US20110009641A1-20110113-C00185.png)
IT (1) IT982699B (US20110009641A1-20110113-C00185.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986179A (en) * 1975-06-30 1976-10-12 Honeywell Information Systems, Inc. Fault-tolerant CCD memory chip
JPS5857838B2 (ja) * 1980-12-29 1983-12-22 富士通株式会社 デコ−ド回路
US4963769A (en) * 1989-05-08 1990-10-16 Cypress Semiconductor Circuit for selective power-down of unused circuitry
US5946257A (en) 1996-07-24 1999-08-31 Micron Technology, Inc. Selective power distribution circuit for an integrated circuit
US20030074610A1 (en) * 2001-10-16 2003-04-17 Umax Data Systems Inc. Method for improving utilization of a defective memory device in an image processing system
KR100481849B1 (ko) * 2001-12-04 2005-04-11 삼성전자주식회사 용량 변경이 가능한 캐쉬 메모리 및 이를 구비한 프로세서칩
JP2009093205A (ja) * 2009-02-02 2009-04-30 Hinomoto Gosei Jushi Seisakusho:Kk 分子模型

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3402398A (en) * 1964-08-31 1968-09-17 Bunker Ramo Plural content addressed memories with a common sensing circuit
US3422402A (en) * 1965-12-29 1969-01-14 Ibm Memory systems for using storage devices containing defective bits
US3588830A (en) * 1968-01-17 1971-06-28 Ibm System for using a memory having irremediable bad bits
US3659275A (en) * 1970-06-08 1972-04-25 Cogar Corp Memory correction redundancy system
US3688280A (en) * 1970-09-22 1972-08-29 Ibm Monolithic memory system with bi-level powering for reduced power consumption

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
(PUBLICATION US "IEEE JOURNAL OF SOLID-STATE CIRCUITS", VOLUME SC-5, NO. 5, OCTOBRE 1970, PAGES 181 - 186) *
*REVUE GB MICROELECTRONICS, VOLUME 3, NO. 11, 1971, PAGES 47 - 51 ARTICLE : "DESIGN CONSIDERATIONS FOR A HIGH PERFORMANCE 1. 1 MEGABIT SEMICONDUCTOR MAINFRAME MEMORY" HANLON ) *
*REVUE US "INTERNATIONAL ELECTRONICS", VOLUME 17, NO. 5, SEPTEMBRE *
FEVRIER 1972, PAGES 32 - 39, ARTICLE "POWER REDUCTION TECHNIQUES FOR LSI MEMORY" GREENE *
OCTOBRE 1970, PAGES 12 - 15 ARTICLE : "AN ADVANCE LOOK AT TOMORROW'S MEMORIES" RAISANEN . *
REVUE US "COMPUTER", VOLUME 5, NO. 1, JANVIER *

Also Published As

Publication number Publication date
DE2332555A1 (de) 1974-01-17
IT982699B (it) 1974-10-21
FR2191203B1 (US20110009641A1-20110113-C00185.png) 1976-04-30
JPS5440183B2 (US20110009641A1-20110113-C00185.png) 1979-12-01
US3750116A (en) 1973-07-31
GB1418552A (en) 1975-12-24
JPS4945650A (US20110009641A1-20110113-C00185.png) 1974-05-01
CA1019835A (en) 1977-10-25

Similar Documents

Publication Publication Date Title
FR2236547B1 (US20110009641A1-20110113-C00185.png)
FR2199771A5 (US20110009641A1-20110113-C00185.png)
JPS4919533A (US20110009641A1-20110113-C00185.png)
FR2191203B1 (US20110009641A1-20110113-C00185.png)
JPS567276B2 (US20110009641A1-20110113-C00185.png)
JPS5646814B2 (US20110009641A1-20110113-C00185.png)
JPS5125838B2 (US20110009641A1-20110113-C00185.png)
JPS5521488B2 (US20110009641A1-20110113-C00185.png)
JPS4950937U (US20110009641A1-20110113-C00185.png)
JPS4924528U (US20110009641A1-20110113-C00185.png)
CS155900B1 (US20110009641A1-20110113-C00185.png)
CS154774B1 (US20110009641A1-20110113-C00185.png)
CS153883B1 (US20110009641A1-20110113-C00185.png)
CS153652B1 (US20110009641A1-20110113-C00185.png)
JPS49136451U (US20110009641A1-20110113-C00185.png)
JPS4896076A (US20110009641A1-20110113-C00185.png)
CS156048B1 (US20110009641A1-20110113-C00185.png)
LU66134A1 (US20110009641A1-20110113-C00185.png)
CH578533A5 (US20110009641A1-20110113-C00185.png)
CH580107A5 (US20110009641A1-20110113-C00185.png)
CH604740A5 (US20110009641A1-20110113-C00185.png)
CH599131A5 (US20110009641A1-20110113-C00185.png)
CH580116A5 (US20110009641A1-20110113-C00185.png)
CH577697A5 (US20110009641A1-20110113-C00185.png)
CH566333A5 (US20110009641A1-20110113-C00185.png)

Legal Events

Date Code Title Description
ST Notification of lapse