FR2189876B1 - - Google Patents
Info
- Publication number
- FR2189876B1 FR2189876B1 FR7222797A FR7222797A FR2189876B1 FR 2189876 B1 FR2189876 B1 FR 2189876B1 FR 7222797 A FR7222797 A FR 7222797A FR 7222797 A FR7222797 A FR 7222797A FR 2189876 B1 FR2189876 B1 FR 2189876B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7222797A FR2189876A1 (en) | 1972-06-23 | 1972-06-23 | Radiation resistant silicon wafers - and solar cells made therefrom for use in space |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7222797A FR2189876A1 (en) | 1972-06-23 | 1972-06-23 | Radiation resistant silicon wafers - and solar cells made therefrom for use in space |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2189876A1 FR2189876A1 (en) | 1974-01-25 |
| FR2189876B1 true FR2189876B1 (enrdf_load_stackoverflow) | 1974-12-27 |
Family
ID=9100713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7222797A Granted FR2189876A1 (en) | 1972-06-23 | 1972-06-23 | Radiation resistant silicon wafers - and solar cells made therefrom for use in space |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2189876A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2049643B (en) * | 1979-05-30 | 1983-07-20 | Siemens Ag | Process for the production of silicon having semiconducting proprties |
| JPS60183768A (ja) * | 1984-03-02 | 1985-09-19 | Hitachi Ltd | 耐放射線強化半導体素子 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3390020A (en) * | 1964-03-17 | 1968-06-25 | Mandelkorn Joseph | Semiconductor material and method of making same |
| GB1249317A (en) * | 1968-11-19 | 1971-10-13 | Mullard Ltd | Semiconductor devices |
| DE2014903B2 (de) * | 1969-03-28 | 1973-06-28 | Transistor mit niedriger rauschzahl und verfahren zu seiner herstellung |
-
1972
- 1972-06-23 FR FR7222797A patent/FR2189876A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2189876A1 (en) | 1974-01-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |