FR2185860A1 - - Google Patents
Info
- Publication number
- FR2185860A1 FR2185860A1 FR7314646A FR7314646A FR2185860A1 FR 2185860 A1 FR2185860 A1 FR 2185860A1 FR 7314646 A FR7314646 A FR 7314646A FR 7314646 A FR7314646 A FR 7314646A FR 2185860 A1 FR2185860 A1 FR 2185860A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47039764A JPS493583A (it) | 1972-04-20 | 1972-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2185860A1 true FR2185860A1 (it) | 1974-01-04 |
| FR2185860B1 FR2185860B1 (it) | 1977-08-19 |
Family
ID=12561993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7314646A Expired FR2185860B1 (it) | 1972-04-20 | 1973-04-20 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS493583A (it) |
| CA (1) | CA982701A (it) |
| DE (1) | DE2320563B2 (it) |
| FR (1) | FR2185860B1 (it) |
| GB (1) | GB1425957A (it) |
| NL (1) | NL7305643A (it) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0022355A1 (en) * | 1979-07-06 | 1981-01-14 | Hitachi, Ltd. | Gate turn-off thyristor |
| EP1111684A1 (fr) * | 1999-12-24 | 2001-06-27 | STMicroelectronics SA | Procédé de fabrication de composants de puissance verticaux |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5147583B2 (it) * | 1972-12-29 | 1976-12-15 | ||
| AT377645B (de) * | 1972-12-29 | 1985-04-10 | Sony Corp | Halbleiterbauteil |
| JPS5754969B2 (it) * | 1974-04-04 | 1982-11-20 | ||
| JPS5753672B2 (it) * | 1974-04-10 | 1982-11-13 | ||
| JPS57658B2 (it) * | 1974-04-16 | 1982-01-07 | ||
| JPS5714064B2 (it) * | 1974-04-25 | 1982-03-20 | ||
| JPS5718710B2 (it) * | 1974-05-10 | 1982-04-17 | ||
| JPS5648983B2 (it) * | 1974-05-10 | 1981-11-19 | ||
| DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
| JPS5630758A (en) * | 1979-08-21 | 1981-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Negative feedback type bipolar transistor |
| CN113380883B (zh) * | 2021-06-08 | 2024-09-06 | 深圳市槟城电子股份有限公司 | 半导体放电管及供电电路 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| GB1196576A (en) * | 1968-03-06 | 1970-07-01 | Westinghouse Electric Corp | High Current Gate Controlled Switches |
-
1972
- 1972-04-20 JP JP47039764A patent/JPS493583A/ja active Pending
-
1973
- 1973-04-18 GB GB1869673A patent/GB1425957A/en not_active Expired
- 1973-04-19 CA CA169,179A patent/CA982701A/en not_active Expired
- 1973-04-19 NL NL7305643A patent/NL7305643A/xx not_active Application Discontinuation
- 1973-04-20 FR FR7314646A patent/FR2185860B1/fr not_active Expired
- 1973-04-21 DE DE19732320563 patent/DE2320563B2/de not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| GB1196576A (en) * | 1968-03-06 | 1970-07-01 | Westinghouse Electric Corp | High Current Gate Controlled Switches |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0022355A1 (en) * | 1979-07-06 | 1981-01-14 | Hitachi, Ltd. | Gate turn-off thyristor |
| EP1111684A1 (fr) * | 1999-12-24 | 2001-06-27 | STMicroelectronics SA | Procédé de fabrication de composants de puissance verticaux |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2320563B2 (de) | 1976-04-01 |
| CA982701A (en) | 1976-01-27 |
| FR2185860B1 (it) | 1977-08-19 |
| GB1425957A (en) | 1976-02-25 |
| JPS493583A (it) | 1974-01-12 |
| NL7305643A (it) | 1973-10-23 |
| DE2320563A1 (de) | 1973-10-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |