FR2183709B1 - - Google Patents
Info
- Publication number
- FR2183709B1 FR2183709B1 FR7313782*A FR7313782A FR2183709B1 FR 2183709 B1 FR2183709 B1 FR 2183709B1 FR 7313782 A FR7313782 A FR 7313782A FR 2183709 B1 FR2183709 B1 FR 2183709B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25244572A | 1972-05-11 | 1972-05-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2183709A1 FR2183709A1 (en) | 1973-12-21 |
| FR2183709B1 true FR2183709B1 (https=) | 1976-05-28 |
Family
ID=22956030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7313782A Granted FR2183709A1 (en) | 1972-05-11 | 1973-03-30 | Semiconductor resistance - in epitaxial layer buried below insulating layer, for high element density |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5317394B2 (https=) |
| CA (1) | CA985793A (https=) |
| DE (1) | DE2314747A1 (https=) |
| FR (1) | FR2183709A1 (https=) |
| IT (1) | IT979178B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112779A (en) * | 1974-07-23 | 1976-01-31 | Tokyo Shibaura Electric Co | Handotaisochito sonoseizohoho |
| JPS52146578A (en) * | 1976-05-28 | 1977-12-06 | Texas Instruments Inc | Method of producing resistance element and semiconductor device having same element |
| JPS54136279A (en) * | 1978-04-14 | 1979-10-23 | Nec Corp | Semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404321A (en) * | 1963-01-29 | 1968-10-01 | Nippon Electric Co | Transistor body enclosing a submerged integrated resistor |
| FR1547292A (fr) * | 1966-12-19 | 1968-11-22 | Gen Electric | Perfectionnements aux dispositifs à semiconducteur |
| NL170902C (nl) * | 1970-07-10 | 1983-01-03 | Philips Nv | Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
-
1973
- 1973-02-16 IT IT7320473A patent/IT979178B/it active
- 1973-03-24 DE DE19732314747 patent/DE2314747A1/de active Pending
- 1973-03-30 FR FR7313782A patent/FR2183709A1/fr active Granted
- 1973-04-11 JP JP4052673A patent/JPS5317394B2/ja not_active Expired
- 1973-04-13 CA CA169,267A patent/CA985793A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2314747A1 (de) | 1973-11-22 |
| JPS5317394B2 (https=) | 1978-06-08 |
| CA985793A (en) | 1976-03-16 |
| IT979178B (it) | 1974-09-30 |
| JPS4924373A (https=) | 1974-03-04 |
| FR2183709A1 (en) | 1973-12-21 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |