FR2173729B1 - - Google Patents

Info

Publication number
FR2173729B1
FR2173729B1 FR7206867A FR7206867A FR2173729B1 FR 2173729 B1 FR2173729 B1 FR 2173729B1 FR 7206867 A FR7206867 A FR 7206867A FR 7206867 A FR7206867 A FR 7206867A FR 2173729 B1 FR2173729 B1 FR 2173729B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7206867A
Other languages
French (fr)
Other versions
FR2173729A1 (Direct
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7206867A priority Critical patent/FR2173729B1/fr
Publication of FR2173729A1 publication Critical patent/FR2173729A1/fr
Application granted granted Critical
Publication of FR2173729B1 publication Critical patent/FR2173729B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W10/041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10W10/0143—
    • H10W10/17—
    • H10W10/40—
    • H10W20/021—
FR7206867A 1972-02-29 1972-02-29 Expired FR2173729B1 (Direct)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7206867A FR2173729B1 (Direct) 1972-02-29 1972-02-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7206867A FR2173729B1 (Direct) 1972-02-29 1972-02-29

Publications (2)

Publication Number Publication Date
FR2173729A1 FR2173729A1 (Direct) 1973-10-12
FR2173729B1 true FR2173729B1 (Direct) 1977-07-15

Family

ID=9094323

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7206867A Expired FR2173729B1 (Direct) 1972-02-29 1972-02-29

Country Status (1)

Country Link
FR (1) FR2173729B1 (Direct)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2436501A1 (fr) * 1978-09-15 1980-04-11 Thomson Csf Transistors bipolaires a tension elevee, circuits integres comportant de tels transistors, et procede de fabrication de tels circuits
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
DE69324119T2 (de) * 1992-12-21 1999-08-05 Stmicroelectronics, Inc., Carrollton, Tex. Diodenstruktur mit PN-Übergang

Also Published As

Publication number Publication date
FR2173729A1 (Direct) 1973-10-12

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Legal Events

Date Code Title Description
ST Notification of lapse