FR2172768B1 - - Google Patents
Info
- Publication number
- FR2172768B1 FR2172768B1 FR7205758A FR7205758A FR2172768B1 FR 2172768 B1 FR2172768 B1 FR 2172768B1 FR 7205758 A FR7205758 A FR 7205758A FR 7205758 A FR7205758 A FR 7205758A FR 2172768 B1 FR2172768 B1 FR 2172768B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7205758A FR2172768A1 (en) | 1972-02-21 | 1972-02-21 | Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7205758A FR2172768A1 (en) | 1972-02-21 | 1972-02-21 | Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2172768A1 FR2172768A1 (en) | 1973-10-05 |
| FR2172768B1 true FR2172768B1 (US20070031759A1-20070208-C00026.png) | 1974-09-13 |
Family
ID=9093836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7205758A Granted FR2172768A1 (en) | 1972-02-21 | 1972-02-21 | Composite material crystal growth - using soln of the cpd in presence of vapour-phase components(s) |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2172768A1 (US20070031759A1-20070208-C00026.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2759383B1 (fr) * | 1997-02-07 | 1999-03-26 | Sofradir | Procede pour la realisation d'un semi-conducteur par cristallisation d'un bain liquide et installation pour la mise en oeuvre de ce procede |
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1972
- 1972-02-21 FR FR7205758A patent/FR2172768A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2172768A1 (en) | 1973-10-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |