FR2170955A1 - - Google Patents

Info

Publication number
FR2170955A1
FR2170955A1 FR7204383A FR7204383A FR2170955A1 FR 2170955 A1 FR2170955 A1 FR 2170955A1 FR 7204383 A FR7204383 A FR 7204383A FR 7204383 A FR7204383 A FR 7204383A FR 2170955 A1 FR2170955 A1 FR 2170955A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7204383A
Other languages
French (fr)
Other versions
FR2170955B1 (en:Method
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB481172A priority Critical patent/GB1328185A/en
Application filed by Individual filed Critical Individual
Priority to FR7204383A priority patent/FR2170955B1/fr
Priority to US355293A priority patent/US3870850A/en
Publication of FR2170955A1 publication Critical patent/FR2170955A1/fr
Application granted granted Critical
Publication of FR2170955B1 publication Critical patent/FR2170955B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0004—Resistance soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01018—Argon [Ar]
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    • H01L2924/01025—Manganese [Mn]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01051—Antimony [Sb]
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    • H01L2924/01073—Tantalum [Ta]
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    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
FR7204383A 1972-02-02 1972-02-09 Expired FR2170955B1 (en:Method)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB481172A GB1328185A (en) 1972-02-02 1972-02-02 Method of joining electrically conducting bodies
FR7204383A FR2170955B1 (en:Method) 1972-02-02 1972-02-09
US355293A US3870850A (en) 1972-02-02 1973-04-27 Method of connecting electrically conducting bodies

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB481172 1972-02-02
FR7204383A FR2170955B1 (en:Method) 1972-02-02 1972-02-09
US22865272A 1972-02-23 1972-02-23
US355293A US3870850A (en) 1972-02-02 1973-04-27 Method of connecting electrically conducting bodies

Publications (2)

Publication Number Publication Date
FR2170955A1 true FR2170955A1 (en:Method) 1973-09-21
FR2170955B1 FR2170955B1 (en:Method) 1975-10-24

Family

ID=27446155

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7204383A Expired FR2170955B1 (en:Method) 1972-02-02 1972-02-09

Country Status (3)

Country Link
US (1) US3870850A (en:Method)
FR (1) FR2170955B1 (en:Method)
GB (1) GB1328185A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2895831A1 (fr) * 2006-01-03 2007-07-06 Alcatel Sa Source compacte a faisceau de rayons x de tres grande brillance

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2943243C3 (de) * 1979-10-23 1982-04-01 Zschimmer, Gero, 8000 München Verfahren zum Verlöten von Teilen und Vorrichtung zu dessen Durchführung
US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
FR2544131B1 (fr) * 1983-04-08 1985-07-05 Telecommunications Sa Detecteur photovoltaique en immersion optique
US4542397A (en) * 1984-04-12 1985-09-17 Xerox Corporation Self aligning small scale integrated circuit semiconductor chips to form large area arrays
EP0284817B1 (de) * 1987-04-03 1991-01-23 BBC Brown Boveri AG Verfahren zum Herstellen von Halbleiterbauelementen
US5075253A (en) * 1989-04-12 1991-12-24 Advanced Micro Devices, Inc. Method of coplanar integration of semiconductor IC devices
US4990462A (en) * 1989-04-12 1991-02-05 Advanced Micro Devices, Inc. Method for coplanar integration of semiconductor ic devices
US6864570B2 (en) * 1993-12-17 2005-03-08 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US8283566B2 (en) 2009-03-14 2012-10-09 Palo Alto Research Center Incorporated Printed circuit boards by massive parallel assembly

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427460A (en) * 1964-09-10 1969-02-11 Rca Corp Beam-of-light transistor utilizing p-n junctions which are non-abrupt and non-tunneling with a base region of degenerate material
US3374530A (en) * 1965-07-16 1968-03-26 Gen Dynamics Corp Process for the joinder of metallic members
US3660632A (en) * 1970-06-17 1972-05-02 Us Navy Method for bonding silicon chips to a cold substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2895831A1 (fr) * 2006-01-03 2007-07-06 Alcatel Sa Source compacte a faisceau de rayons x de tres grande brillance
US7515687B2 (en) 2006-01-03 2009-04-07 Alcatel Lucent Compact source with very bright X-ray beam

Also Published As

Publication number Publication date
FR2170955B1 (en:Method) 1975-10-24
GB1328185A (en) 1973-08-30
US3870850A (en) 1975-03-11

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