FR2170955A1 - - Google Patents

Info

Publication number
FR2170955A1
FR2170955A1 FR7204383A FR7204383A FR2170955A1 FR 2170955 A1 FR2170955 A1 FR 2170955A1 FR 7204383 A FR7204383 A FR 7204383A FR 7204383 A FR7204383 A FR 7204383A FR 2170955 A1 FR2170955 A1 FR 2170955A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7204383A
Other versions
FR2170955B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB481172A priority Critical patent/GB1328185A/en
Application filed by Individual filed Critical Individual
Priority to FR7204383A priority patent/FR2170955B1/fr
Priority to US355293A priority patent/US3870850A/en
Publication of FR2170955A1 publication Critical patent/FR2170955A1/fr
Application granted granted Critical
Publication of FR2170955B1 publication Critical patent/FR2170955B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0004—Resistance soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01018—Argon [Ar]
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    • H01L2924/01025—Manganese [Mn]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/01049—Indium [In]
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
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    • H01L2924/01073—Tantalum [Ta]
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    • H01L2924/01075—Rhenium [Re]
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    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7204383A 1972-02-02 1972-02-09 Expired FR2170955B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB481172A GB1328185A (en) 1972-02-02 1972-02-02 Method of joining electrically conducting bodies
FR7204383A FR2170955B1 (fr) 1972-02-02 1972-02-09
US355293A US3870850A (en) 1972-02-02 1973-04-27 Method of connecting electrically conducting bodies

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB481172 1972-02-02
FR7204383A FR2170955B1 (fr) 1972-02-02 1972-02-09
US22865272A 1972-02-23 1972-02-23
US355293A US3870850A (en) 1972-02-02 1973-04-27 Method of connecting electrically conducting bodies

Publications (2)

Publication Number Publication Date
FR2170955A1 true FR2170955A1 (fr) 1973-09-21
FR2170955B1 FR2170955B1 (fr) 1975-10-24

Family

ID=27446155

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7204383A Expired FR2170955B1 (fr) 1972-02-02 1972-02-09

Country Status (3)

Country Link
US (1) US3870850A (fr)
FR (1) FR2170955B1 (fr)
GB (1) GB1328185A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2895831A1 (fr) * 2006-01-03 2007-07-06 Alcatel Sa Source compacte a faisceau de rayons x de tres grande brillance

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2943243C3 (de) * 1979-10-23 1982-04-01 Zschimmer, Gero, 8000 München Verfahren zum Verlöten von Teilen und Vorrichtung zu dessen Durchführung
US4381598A (en) * 1981-06-11 1983-05-03 General Electric Company Method of making anode and cathode connections for electromigration
FR2544131B1 (fr) * 1983-04-08 1985-07-05 Telecommunications Sa Detecteur photovoltaique en immersion optique
US4542397A (en) * 1984-04-12 1985-09-17 Xerox Corporation Self aligning small scale integrated circuit semiconductor chips to form large area arrays
DE3861603D1 (de) * 1987-04-03 1991-02-28 Bbc Brown Boveri & Cie Verfahren zum herstellen von halbleiterbauelementen.
US5075253A (en) * 1989-04-12 1991-12-24 Advanced Micro Devices, Inc. Method of coplanar integration of semiconductor IC devices
US4990462A (en) * 1989-04-12 1991-02-05 Advanced Micro Devices, Inc. Method for coplanar integration of semiconductor ic devices
US6864570B2 (en) * 1993-12-17 2005-03-08 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US8283566B2 (en) 2009-03-14 2012-10-09 Palo Alto Research Center Incorporated Printed circuit boards by massive parallel assembly

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427460A (en) * 1964-09-10 1969-02-11 Rca Corp Beam-of-light transistor utilizing p-n junctions which are non-abrupt and non-tunneling with a base region of degenerate material
US3374530A (en) * 1965-07-16 1968-03-26 Gen Dynamics Corp Process for the joinder of metallic members
US3660632A (en) * 1970-06-17 1972-05-02 Us Navy Method for bonding silicon chips to a cold substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2895831A1 (fr) * 2006-01-03 2007-07-06 Alcatel Sa Source compacte a faisceau de rayons x de tres grande brillance
US7515687B2 (en) 2006-01-03 2009-04-07 Alcatel Lucent Compact source with very bright X-ray beam

Also Published As

Publication number Publication date
GB1328185A (en) 1973-08-30
FR2170955B1 (fr) 1975-10-24
US3870850A (en) 1975-03-11

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