FR2167831A1 - - Google Patents

Info

Publication number
FR2167831A1
FR2167831A1 FR7300559A FR7300559A FR2167831A1 FR 2167831 A1 FR2167831 A1 FR 2167831A1 FR 7300559 A FR7300559 A FR 7300559A FR 7300559 A FR7300559 A FR 7300559A FR 2167831 A1 FR2167831 A1 FR 2167831A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7300559A
Other languages
French (fr)
Other versions
FR2167831B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kalle GmbH and Co KG
Original Assignee
Kalle GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kalle GmbH and Co KG filed Critical Kalle GmbH and Co KG
Publication of FR2167831A1 publication Critical patent/FR2167831A1/fr
Application granted granted Critical
Publication of FR2167831B1 publication Critical patent/FR2167831B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02466—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02477—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
FR7300559A 1972-01-10 1973-01-09 Expired FR2167831B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21637672A 1972-01-10 1972-01-10

Publications (2)

Publication Number Publication Date
FR2167831A1 true FR2167831A1 (OSRAM) 1973-08-24
FR2167831B1 FR2167831B1 (OSRAM) 1977-12-30

Family

ID=22806816

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7300559A Expired FR2167831B1 (OSRAM) 1972-01-10 1973-01-09

Country Status (10)

Country Link
JP (1) JPS5228634B2 (OSRAM)
AU (1) AU466927B2 (OSRAM)
BE (1) BE793800A (OSRAM)
CA (1) CA973976A (OSRAM)
DE (1) DE2300921A1 (OSRAM)
FR (1) FR2167831B1 (OSRAM)
GB (1) GB1417484A (OSRAM)
IT (1) IT978097B (OSRAM)
NL (1) NL7300350A (OSRAM)
SE (1) SE387473B (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
CA1256590A (en) * 1985-03-15 1989-06-27 Yuichi Matsui Compound semiconductor device with layers having different lattice constants
GB2215514A (en) * 1988-03-04 1989-09-20 Plessey Co Plc Terminating dislocations in semiconductor epitaxial layers
JP2588280B2 (ja) * 1989-07-10 1997-03-05 シャープ株式会社 化合物半導体発光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH502047A (fr) * 1966-06-22 1971-01-15 Hewlett Packard Co Procédé de fabrication d'un corps de matériau semi-conducteur, corps de matériau semi-conducteur résultant de ce procédé

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH502047A (fr) * 1966-06-22 1971-01-15 Hewlett Packard Co Procédé de fabrication d'un corps de matériau semi-conducteur, corps de matériau semi-conducteur résultant de ce procédé

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
*REVUE US "JOURNAL OF APPLIED PHYSICS", VOL 40, NO. 8, JUILLET 1969 "EFFECT OF GAASX P1-X TRANSITION ZONE ON THE PERFECTION OF GA P CRYSTALS GROWN BY DEPOSITION ONTO GAAS SUBSTRATES" R.H. SAUL, PAGES 3273 A 3279 *
REVUE US "JOURNAL OF THE ELECTROCHEMICAL SOCIETY",VOLUME 118, NO. 5, MAI 1971 : "REDUCED DISLOCATION DENSITY IN LIQUID PHASE EPITAXY LAYERS BY INTERMITTENT GROWTH", R.H. SAUL, PAGES 793 A 795 *

Also Published As

Publication number Publication date
NL7300350A (OSRAM) 1973-07-12
DE2300921A1 (de) 1973-07-19
JPS5228634B2 (OSRAM) 1977-07-27
SE387473B (sv) 1976-09-06
AU5094273A (en) 1974-07-11
GB1417484A (en) 1975-12-10
IT978097B (it) 1974-09-20
BE793800A (fr) 1973-05-02
JPS504977A (OSRAM) 1975-01-20
AU466927B2 (en) 1975-11-13
CA973976A (en) 1975-09-02
FR2167831B1 (OSRAM) 1977-12-30

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Legal Events

Date Code Title Description
ST Notification of lapse