FR2167537A1 - - Google Patents
Info
- Publication number
- FR2167537A1 FR2167537A1 FR7245020A FR7245020A FR2167537A1 FR 2167537 A1 FR2167537 A1 FR 2167537A1 FR 7245020 A FR7245020 A FR 7245020A FR 7245020 A FR7245020 A FR 7245020A FR 2167537 A1 FR2167537 A1 FR 2167537A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722201041 DE2201041C3 (de) | 1972-01-11 | 1972-01-11 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2167537A1 true FR2167537A1 (xx) | 1973-08-24 |
| FR2167537B1 FR2167537B1 (xx) | 1978-01-13 |
Family
ID=5832681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7245020A Expired FR2167537B1 (xx) | 1972-01-11 | 1972-12-18 |
Country Status (8)
| Country | Link |
|---|---|
| JP (2) | JPS5325479B2 (xx) |
| CH (1) | CH541870A (xx) |
| DE (1) | DE2201041C3 (xx) |
| FR (1) | FR2167537B1 (xx) |
| GB (1) | GB1377420A (xx) |
| IT (1) | IT972621B (xx) |
| NL (1) | NL7217455A (xx) |
| SE (1) | SE390084B (xx) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142983A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Scr |
| DE2843960A1 (de) * | 1978-10-09 | 1980-04-10 | Licentia Gmbh | Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps |
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| DE2945391A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit einem abschaltbaren emitter-kurzschluss |
| DE3118317A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb |
-
1972
- 1972-01-11 DE DE19722201041 patent/DE2201041C3/de not_active Expired
- 1972-10-03 CH CH1440672A patent/CH541870A/de not_active IP Right Cessation
- 1972-11-23 GB GB5413272A patent/GB1377420A/en not_active Expired
- 1972-12-18 FR FR7245020A patent/FR2167537B1/fr not_active Expired
- 1972-12-20 IT IT3323572A patent/IT972621B/it active
- 1972-12-21 NL NL7217455A patent/NL7217455A/xx unknown
-
1973
- 1973-01-11 JP JP562673A patent/JPS5325479B2/ja not_active Expired
- 1973-01-11 SE SE7300366A patent/SE390084B/xx unknown
-
1977
- 1977-12-09 JP JP14867277A patent/JPS5386182A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| NEANT * |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7217455A (xx) | 1973-07-13 |
| GB1377420A (en) | 1974-12-18 |
| SE7300366L (xx) | 1973-07-12 |
| JPS5347673B2 (xx) | 1978-12-22 |
| DE2201041C3 (de) | 1980-08-07 |
| DE2201041B2 (de) | 1979-11-29 |
| SE390084B (sv) | 1976-11-29 |
| IT972621B (it) | 1974-05-31 |
| JPS5325479B2 (xx) | 1978-07-27 |
| FR2167537B1 (xx) | 1978-01-13 |
| DE2201041A1 (de) | 1973-07-19 |
| JPS5386182A (en) | 1978-07-29 |
| CH541870A (de) | 1973-09-15 |
| JPS4881488A (xx) | 1973-10-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |