FR2162039A1 - - Google Patents
Info
- Publication number
- FR2162039A1 FR2162039A1 FR7242338A FR7242338A FR2162039A1 FR 2162039 A1 FR2162039 A1 FR 2162039A1 FR 7242338 A FR7242338 A FR 7242338A FR 7242338 A FR7242338 A FR 7242338A FR 2162039 A1 FR2162039 A1 FR 2162039A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5596071A GB1357210A (en) | 1971-12-02 | 1971-12-02 | Method of manufacturing semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2162039A1 true FR2162039A1 (https=) | 1973-07-13 |
| FR2162039B1 FR2162039B1 (https=) | 1976-04-23 |
Family
ID=10475341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7242338A Expired FR2162039B1 (https=) | 1971-12-02 | 1972-11-29 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2257216A1 (https=) |
| FR (1) | FR2162039B1 (https=) |
| GB (1) | GB1357210A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2325196A1 (fr) * | 1975-09-19 | 1977-04-15 | Ibm | Dispositif semi-conducteur presentant des courants de fuite en surface reduits et procede de fabrication |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3360695A (en) * | 1965-08-02 | 1967-12-26 | Sprague Electric Co | Induced region semiconductor device |
| FR2033724A5 (https=) * | 1969-03-27 | 1970-12-04 | Nal Semiconductor Corp |
-
1971
- 1971-12-02 GB GB5596071A patent/GB1357210A/en not_active Expired
-
1972
- 1972-11-22 DE DE2257216A patent/DE2257216A1/de active Pending
- 1972-11-29 FR FR7242338A patent/FR2162039B1/fr not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3360695A (en) * | 1965-08-02 | 1967-12-26 | Sprague Electric Co | Induced region semiconductor device |
| FR2033724A5 (https=) * | 1969-03-27 | 1970-12-04 | Nal Semiconductor Corp |
Non-Patent Citations (3)
| Title |
|---|
| *REVUE US "SOLID-STATE ELECTRONICS", VOL. 12, NO. 5, MAI 1969 "ELECTRICAL PROPERTIES OF DIFFUSED ZINC ON SIO2-SI MOS STRUCTURES" CHUN-YEN ET KUEY-YEAU TSAO, PAGES 411-415 * |
| OCTOBRE 1970, "FET WITH HIGH THICK-TO-THIN OXYDE THRESHOLD VOLTAGE RATIOS", L.H.KAPLAN ET AL, PAGES 1058-1059 * |
| REVUE US "IBM TECHNICAL DISCLOSURE BULLETIN", VOL. 13, NO. 5 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2325196A1 (fr) * | 1975-09-19 | 1977-04-15 | Ibm | Dispositif semi-conducteur presentant des courants de fuite en surface reduits et procede de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2162039B1 (https=) | 1976-04-23 |
| GB1357210A (en) | 1974-06-19 |
| DE2257216A1 (de) | 1973-06-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |