FR2160463B1 - - Google Patents
Info
- Publication number
- FR2160463B1 FR2160463B1 FR7240414A FR7240414A FR2160463B1 FR 2160463 B1 FR2160463 B1 FR 2160463B1 FR 7240414 A FR7240414 A FR 7240414A FR 7240414 A FR7240414 A FR 7240414A FR 2160463 B1 FR2160463 B1 FR 2160463B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19859371A | 1971-11-15 | 1971-11-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2160463A1 FR2160463A1 (fr) | 1973-06-29 |
FR2160463B1 true FR2160463B1 (fr) | 1977-04-22 |
Family
ID=22734011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7240414A Expired FR2160463B1 (fr) | 1971-11-15 | 1972-11-08 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3752715A (fr) |
JP (1) | JPS5314352B2 (fr) |
DE (1) | DE2246147C3 (fr) |
FR (1) | FR2160463B1 (fr) |
GB (1) | GB1334319A (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4879585A (fr) * | 1972-01-24 | 1973-10-25 | ||
US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
JPS5260078A (en) * | 1975-11-12 | 1977-05-18 | Matsushita Electronics Corp | Pnp type transistor for semiconductor integrated circuit |
SU773793A1 (ru) * | 1977-11-02 | 1980-10-23 | Предприятие П/Я -6429 | Способ изготовлени полупроводниковых интегральных бипол рных схем |
JPS55151349A (en) * | 1979-05-15 | 1980-11-25 | Matsushita Electronics Corp | Forming method of insulation isolating region |
JPS57167653A (en) * | 1981-03-23 | 1982-10-15 | Fujitsu Ltd | Manufacture of semiconductor device |
US4512816A (en) * | 1982-02-26 | 1985-04-23 | National Semiconductor Corporation | High-density IC isolation technique capacitors |
-
1971
- 1971-11-15 US US00198593A patent/US3752715A/en not_active Expired - Lifetime
-
1972
- 1972-09-05 GB GB4108372A patent/GB1334319A/en not_active Expired
- 1972-09-20 DE DE2246147A patent/DE2246147C3/de not_active Expired
- 1972-10-25 JP JP10634472A patent/JPS5314352B2/ja not_active Expired
- 1972-11-08 FR FR7240414A patent/FR2160463B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2246147C3 (de) | 1981-01-15 |
DE2246147B2 (de) | 1980-04-24 |
GB1334319A (en) | 1973-10-17 |
JPS4859784A (fr) | 1973-08-22 |
DE2246147A1 (de) | 1973-05-17 |
FR2160463A1 (fr) | 1973-06-29 |
JPS5314352B2 (fr) | 1978-05-17 |
US3752715A (en) | 1973-08-14 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |