FR2154479A1 - - Google Patents

Info

Publication number
FR2154479A1
FR2154479A1 FR7231798A FR7231798A FR2154479A1 FR 2154479 A1 FR2154479 A1 FR 2154479A1 FR 7231798 A FR7231798 A FR 7231798A FR 7231798 A FR7231798 A FR 7231798A FR 2154479 A1 FR2154479 A1 FR 2154479A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7231798A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MOLEKULARELEKTRONIK
Original Assignee
MOLEKULARELEKTRONIK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MOLEKULARELEKTRONIK filed Critical MOLEKULARELEKTRONIK
Publication of FR2154479A1 publication Critical patent/FR2154479A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
FR7231798A 1971-09-16 1972-09-07 Withdrawn FR2154479A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD15775571 1971-09-16

Publications (1)

Publication Number Publication Date
FR2154479A1 true FR2154479A1 (de) 1973-05-11

Family

ID=5484328

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7231798A Withdrawn FR2154479A1 (de) 1971-09-16 1972-09-07

Country Status (4)

Country Link
CS (1) CS180653B1 (de)
DE (1) DE2238808A1 (de)
FR (1) FR2154479A1 (de)
HU (1) HU165229B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2713384A1 (de) * 2012-09-26 2014-04-02 Industrial Technology Research Institute Verfahren zur Bildung strukturierter Dotierungsregionen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2713384A1 (de) * 2012-09-26 2014-04-02 Industrial Technology Research Institute Verfahren zur Bildung strukturierter Dotierungsregionen
US9012314B2 (en) 2012-09-26 2015-04-21 Industrial Technology Research Institute Method for forming patterned doping regions
US9040401B1 (en) 2012-09-26 2015-05-26 Industrial Technology Research Institute Method for forming patterned doping regions

Also Published As

Publication number Publication date
HU165229B (de) 1974-07-27
CS180653B1 (en) 1978-01-31
DE2238808A1 (de) 1973-03-22

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Legal Events

Date Code Title Description
ST Notification of lapse