FR2142017A1 - - Google Patents

Info

Publication number
FR2142017A1
FR2142017A1 FR7221798A FR7221798A FR2142017A1 FR 2142017 A1 FR2142017 A1 FR 2142017A1 FR 7221798 A FR7221798 A FR 7221798A FR 7221798 A FR7221798 A FR 7221798A FR 2142017 A1 FR2142017 A1 FR 2142017A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7221798A
Other languages
French (fr)
Other versions
FR2142017B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2142017A1 publication Critical patent/FR2142017A1/fr
Application granted granted Critical
Publication of FR2142017B1 publication Critical patent/FR2142017B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Ceramic Products (AREA)
FR7221798A 1971-06-18 1972-06-16 Expired FR2142017B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15427171A 1971-06-18 1971-06-18

Publications (2)

Publication Number Publication Date
FR2142017A1 true FR2142017A1 (de) 1973-01-26
FR2142017B1 FR2142017B1 (de) 1977-12-23

Family

ID=22550694

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7221798A Expired FR2142017B1 (de) 1971-06-18 1972-06-16

Country Status (8)

Country Link
US (1) US3735321A (de)
JP (1) JPS5414317B1 (de)
BE (1) BE784524A (de)
CH (1) CH539324A (de)
DE (1) DE2228941A1 (de)
FR (1) FR2142017B1 (de)
GB (1) GB1394394A (de)
SE (1) SE379114B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL181156C (nl) * 1975-09-25 1987-06-16 Gen Electric Werkwijze voor de vervaardiging van een metaaloxide varistor.
JPS57180101A (en) * 1981-04-30 1982-11-06 Hitachi Ltd High temperature thermistor
US4633051A (en) * 1983-11-23 1986-12-30 Advanced Semiconductor Materials America, Inc. Stable conductive elements for direct exposure to reactive environments
US4712085A (en) * 1984-10-30 1987-12-08 Tdk Corporation Thermistor element and method of manufacturing the same
US4806900A (en) * 1986-09-26 1989-02-21 Naoji Fujimori Thermistor and method for producing the same
JP2695000B2 (ja) * 1989-04-11 1997-12-24 住友電気工業株式会社 サーミスタ及びその製造方法
JPH0794303A (ja) * 1993-05-04 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜サーミスタ
CA2419709C (en) * 2002-02-26 2008-09-23 Smith International, Inc. Semiconductive polycrystalline diamond
US8710615B2 (en) * 2011-08-31 2014-04-29 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2609470A (en) * 1949-07-22 1952-09-02 Gen Electric Resistance materials and elements
US3435399A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
US3435398A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
GB1168107A (en) * 1966-09-14 1969-10-22 Hitachi Ltd A Method for Producing Temperature Sensitive Resistor Comprising Vanadium Oxide

Also Published As

Publication number Publication date
SE379114B (de) 1975-09-22
DE2228941A1 (de) 1972-12-21
JPS5414317B1 (de) 1979-06-06
FR2142017B1 (de) 1977-12-23
US3735321A (en) 1973-05-22
CH539324A (de) 1973-07-15
BE784524A (fr) 1972-10-02
GB1394394A (en) 1975-05-14

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Legal Events

Date Code Title Description
ST Notification of lapse