FR2131982A1 - - Google Patents

Info

Publication number
FR2131982A1
FR2131982A1 FR7206632A FR7206632A FR2131982A1 FR 2131982 A1 FR2131982 A1 FR 2131982A1 FR 7206632 A FR7206632 A FR 7206632A FR 7206632 A FR7206632 A FR 7206632A FR 2131982 A1 FR2131982 A1 FR 2131982A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7206632A
Other languages
French (fr)
Other versions
FR2131982B1 (ref
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712115567 external-priority patent/DE2115567C/de
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Publication of FR2131982A1 publication Critical patent/FR2131982A1/fr
Application granted granted Critical
Publication of FR2131982B1 publication Critical patent/FR2131982B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/20—Diffusion for doping of insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
FR7206632A 1971-03-31 1972-02-25 Expired FR2131982B1 (ref)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712115567 DE2115567C (de) 1971-03-31 Verfahren zur Dotierung von Siliziumdioxid Schichten auf Silizium mit Fremdstoffen

Publications (2)

Publication Number Publication Date
FR2131982A1 true FR2131982A1 (ref) 1972-11-17
FR2131982B1 FR2131982B1 (ref) 1975-08-29

Family

ID=5803362

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7206632A Expired FR2131982B1 (ref) 1971-03-31 1972-02-25

Country Status (4)

Country Link
DE (1) DE2115567B1 (ref)
FR (1) FR2131982B1 (ref)
GB (1) GB1315923A (ref)
NL (1) NL7201295A (ref)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9984894B2 (en) 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1346546A (fr) * 1961-12-14 1963-12-20 Texas Instruments Inc Méthode de diffusion d'impureté dans un semi-conducteur

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1346546A (fr) * 1961-12-14 1963-12-20 Texas Instruments Inc Méthode de diffusion d'impureté dans un semi-conducteur

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE US"JOURNAL OF APPLIED PHYSICS"VOL.41,SEPTEMBRE 1970,"ENHANCED DIFFUSION AND OUT-DIFFUSIONIN ION-IMPLANTED SILICON",O.MEYER ET J.W.MAYER,PAGES 4166-4174.) *
IN ION-IMPLANTED SILICON",O.MEYER ET J.W.MAYER,PAGES 4166-4174.) *
REVUE US"JOURNAL OF APPLIED PHYSICS"VOL.41,SEPTEMBRE 1970,"ENHANCED DIFFUSION AND OUT-DIFFUSION *

Also Published As

Publication number Publication date
NL7201295A (ref) 1972-10-03
FR2131982B1 (ref) 1975-08-29
GB1315923A (en) 1973-05-09
DE2115567B1 (de) 1972-11-16

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Legal Events

Date Code Title Description
ST Notification of lapse