FR2124353A1 - - Google Patents

Info

Publication number
FR2124353A1
FR2124353A1 FR7203335A FR7203335A FR2124353A1 FR 2124353 A1 FR2124353 A1 FR 2124353A1 FR 7203335 A FR7203335 A FR 7203335A FR 7203335 A FR7203335 A FR 7203335A FR 2124353 A1 FR2124353 A1 FR 2124353A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7203335A
Other languages
French (fr)
Other versions
FR2124353B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of FR2124353A1 publication Critical patent/FR2124353A1/fr
Application granted granted Critical
Publication of FR2124353B1 publication Critical patent/FR2124353B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/18—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of distributed coupling, i.e. distributed amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/581—Auxiliary members, e.g. flow barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
FR7203335A 1971-02-08 1972-02-01 Expired FR2124353B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11327271A 1971-02-08 1971-02-08

Publications (2)

Publication Number Publication Date
FR2124353A1 true FR2124353A1 (enExample) 1972-09-22
FR2124353B1 FR2124353B1 (enExample) 1977-09-02

Family

ID=22348511

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7203335A Expired FR2124353B1 (enExample) 1971-02-08 1972-02-01

Country Status (4)

Country Link
JP (1) JPS5247672B1 (enExample)
DE (1) DE2203892C3 (enExample)
FR (1) FR2124353B1 (enExample)
IT (1) IT947369B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015709A1 (en) * 1979-03-10 1980-09-17 Fujitsu Limited Constructional arrangement for semiconductor devices
FR2533777A1 (fr) * 1982-09-24 1984-03-30 Thomson Csf Oscillateur hyperfrequence de puissance
EP0171445A1 (de) * 1984-08-11 1986-02-19 Deutsche ITT Industries GmbH Monolithisch integrierte Schaltung mit einem integrierten MIS-Kondensator
EP2160761B1 (en) * 2007-06-22 2019-12-04 Cree, Inc. Rf transistor package with input and output matching networks each comprising a split capacitor and corresponding manufacturing method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202925C (enExample) * 1969-04-30 1900-01-01
FR1389203A (fr) * 1963-03-21 1965-02-12 Telefunken Patent Agencement pour dispositifs semi-conducteurs
GB1054514A (enExample) * 1963-04-05 1900-01-01
US3327238A (en) * 1964-07-10 1967-06-20 Rca Corp Parallel active circuit elements with provision for power distribution
NL6717634A (enExample) * 1967-12-22 1969-06-24
US3539884A (en) * 1968-09-18 1970-11-10 Motorola Inc Integrated transistor and variable capacitor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015709A1 (en) * 1979-03-10 1980-09-17 Fujitsu Limited Constructional arrangement for semiconductor devices
FR2533777A1 (fr) * 1982-09-24 1984-03-30 Thomson Csf Oscillateur hyperfrequence de puissance
EP0106740A1 (fr) * 1982-09-24 1984-04-25 Thomson-Csf Oscillateur hyperfréquence de puissance
EP0171445A1 (de) * 1984-08-11 1986-02-19 Deutsche ITT Industries GmbH Monolithisch integrierte Schaltung mit einem integrierten MIS-Kondensator
EP2160761B1 (en) * 2007-06-22 2019-12-04 Cree, Inc. Rf transistor package with input and output matching networks each comprising a split capacitor and corresponding manufacturing method

Also Published As

Publication number Publication date
DE2203892C3 (de) 1982-05-27
FR2124353B1 (enExample) 1977-09-02
JPS5247672B1 (enExample) 1977-12-03
IT947369B (it) 1973-05-21
DE2203892A1 (de) 1972-10-19
DE2203892B2 (enExample) 1975-03-06

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Legal Events

Date Code Title Description
ST Notification of lapse