FR2124142A1 - - Google Patents

Info

Publication number
FR2124142A1
FR2124142A1 FR7104270A FR7104270A FR2124142A1 FR 2124142 A1 FR2124142 A1 FR 2124142A1 FR 7104270 A FR7104270 A FR 7104270A FR 7104270 A FR7104270 A FR 7104270A FR 2124142 A1 FR2124142 A1 FR 2124142A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7104270A
Other languages
French (fr)
Other versions
FR2124142B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMI CONDUCTEURS
Original Assignee
SEMI CONDUCTEURS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMI CONDUCTEURS filed Critical SEMI CONDUCTEURS
Priority to FR7104270A priority Critical patent/FR2124142B1/fr
Publication of FR2124142A1 publication Critical patent/FR2124142A1/fr
Application granted granted Critical
Publication of FR2124142B1 publication Critical patent/FR2124142B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR7104270A 1971-02-09 1971-02-09 Expired FR2124142B1 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7104270A FR2124142B1 (enrdf_load_stackoverflow) 1971-02-09 1971-02-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7104270A FR2124142B1 (enrdf_load_stackoverflow) 1971-02-09 1971-02-09

Publications (2)

Publication Number Publication Date
FR2124142A1 true FR2124142A1 (enrdf_load_stackoverflow) 1972-09-22
FR2124142B1 FR2124142B1 (enrdf_load_stackoverflow) 1973-11-30

Family

ID=9071596

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7104270A Expired FR2124142B1 (enrdf_load_stackoverflow) 1971-02-09 1971-02-09

Country Status (1)

Country Link
FR (1) FR2124142B1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19946167A1 (de) * 1999-09-27 2001-04-12 Infineon Technologies Ag Integrierte Halbbrückenschaltung
FR2820881A1 (fr) * 2001-02-12 2002-08-16 St Microelectronics Sa Dispositif d'ajustement des circuits avant mise en boitier

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317850A (en) * 1963-04-29 1967-05-02 Fairchild Camera Instr Co Temperature-stable differential amplifier using field-effect devices
FR1559611A (enrdf_load_stackoverflow) * 1967-06-30 1969-03-14
GB1163568A (en) * 1966-07-15 1969-09-10 Westinghouse Electric Corp MOS field effect transistor amplifier apparatus
FR2028085A7 (enrdf_load_stackoverflow) * 1969-01-10 1970-10-09 Fairchild Camera Instr Co

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317850A (en) * 1963-04-29 1967-05-02 Fairchild Camera Instr Co Temperature-stable differential amplifier using field-effect devices
GB1163568A (en) * 1966-07-15 1969-09-10 Westinghouse Electric Corp MOS field effect transistor amplifier apparatus
FR1559611A (enrdf_load_stackoverflow) * 1967-06-30 1969-03-14
FR2028085A7 (enrdf_load_stackoverflow) * 1969-01-10 1970-10-09 Fairchild Camera Instr Co

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19946167A1 (de) * 1999-09-27 2001-04-12 Infineon Technologies Ag Integrierte Halbbrückenschaltung
DE19946167C2 (de) * 1999-09-27 2002-04-25 Infineon Technologies Ag Integrierte Halbbrückenschaltung
FR2820881A1 (fr) * 2001-02-12 2002-08-16 St Microelectronics Sa Dispositif d'ajustement des circuits avant mise en boitier
WO2002065551A1 (fr) * 2001-02-12 2002-08-22 Stmicroelectronics Sa Dispositif d'ajustement des circuits avant mise en boitier

Also Published As

Publication number Publication date
FR2124142B1 (enrdf_load_stackoverflow) 1973-11-30

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Legal Events

Date Code Title Description
ST Notification of lapse