FR2117944A1 - - Google Patents

Info

Publication number
FR2117944A1
FR2117944A1 FR7144043A FR7144043A FR2117944A1 FR 2117944 A1 FR2117944 A1 FR 2117944A1 FR 7144043 A FR7144043 A FR 7144043A FR 7144043 A FR7144043 A FR 7144043A FR 2117944 A1 FR2117944 A1 FR 2117944A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7144043A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2117944A1 publication Critical patent/FR2117944A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H10W72/5522—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Semiconductor Lasers (AREA)
FR7144043A 1970-12-09 1971-12-08 Withdrawn FR2117944A1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9653070A 1970-12-09 1970-12-09

Publications (1)

Publication Number Publication Date
FR2117944A1 true FR2117944A1 (enExample) 1972-07-28

Family

ID=22257787

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7144043A Withdrawn FR2117944A1 (enExample) 1970-12-09 1971-12-08

Country Status (3)

Country Link
US (1) US3702975A (enExample)
DE (1) DE2160005A1 (enExample)
FR (1) FR2117944A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2285733A1 (fr) * 1974-09-17 1976-04-16 Northern Electric Co Laser a semi-conducteur a largeur de zone d'emission variable
FR2368164A1 (fr) * 1976-10-13 1978-05-12 Int Standard Electric Corp Laser a semi-conducteur a double bande de contact

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922775A (en) * 1973-09-13 1975-12-02 Sperry Rand Corp High frequency diode and manufacture thereof
US3872496A (en) * 1973-09-13 1975-03-18 Sperry Rand Corp High frequency diode having simultaneously formed high strength bonds with respect to a diamond heat sink and said diode
US3959808A (en) * 1974-09-19 1976-05-25 Northern Electric Company Limited Variable stripe width semiconductor laser
DE2556469C3 (de) * 1975-12-15 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit Druckkontakt
NL7801181A (nl) * 1978-02-02 1979-08-06 Philips Nv Injectielaser.
US4217561A (en) * 1978-06-26 1980-08-12 Xerox Corporation Beam scanning using radiation pattern distortion
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
USRE31806E (en) * 1978-10-30 1985-01-15 Xerox Corporation Monolithic multi-emitting laser device
US4325034A (en) * 1980-02-12 1982-04-13 Northern Telecom Limited Semiconductor lasers with integrally formed light emitting diodes
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
DE3482652D1 (de) * 1984-01-13 1990-08-09 Siemens Ag Halbleiter-diodenlaser.
EP0183473A3 (en) * 1984-11-19 1987-10-28 Sharp Kabushiki Kaisha Semiconductor laser devices
US4700353A (en) * 1985-08-12 1987-10-13 Cornell Research Foundation, Inc. Active modulation of quantum well lasers by energy shifts in gain spectra with applied electric field
JPH0732292B2 (ja) * 1987-06-17 1995-04-10 富士通株式会社 半導体発光装置
US4878222A (en) * 1988-08-05 1989-10-31 Eastman Kodak Company Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot
US6040590A (en) * 1996-12-12 2000-03-21 California Institute Of Technology Semiconductor device with electrostatic control
US6441889B1 (en) 2000-11-29 2002-08-27 P.A.T.C.O. Properties, Inc. LIDAR with increased emitted laser power
WO2021239729A1 (en) 2020-05-26 2021-12-02 Brolis Sensor Technology, Uab Optoelectronic devices with tunable optical mode and carrier distribution in the waveguides

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479614A (en) * 1967-03-23 1969-11-18 Bell Telephone Labor Inc Tunable semiconductor optical masers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2285733A1 (fr) * 1974-09-17 1976-04-16 Northern Electric Co Laser a semi-conducteur a largeur de zone d'emission variable
FR2368164A1 (fr) * 1976-10-13 1978-05-12 Int Standard Electric Corp Laser a semi-conducteur a double bande de contact

Also Published As

Publication number Publication date
US3702975A (en) 1972-11-14
DE2160005A1 (de) 1972-06-15

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Legal Events

Date Code Title Description
ST Notification of lapse