FR2108102A1 - Photo-diode - with antireflex layer of transparent semiconductor material forming barrier layer free hetero-junction - Google Patents

Photo-diode - with antireflex layer of transparent semiconductor material forming barrier layer free hetero-junction

Info

Publication number
FR2108102A1
FR2108102A1 FR7134991A FR7134991A FR2108102A1 FR 2108102 A1 FR2108102 A1 FR 2108102A1 FR 7134991 A FR7134991 A FR 7134991A FR 7134991 A FR7134991 A FR 7134991A FR 2108102 A1 FR2108102 A1 FR 2108102A1
Authority
FR
France
Prior art keywords
junction
photo
diode
semiconductor material
material forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7134991A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2108102A1 publication Critical patent/FR2108102A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Laminated Bodies (AREA)
  • Light Receiving Elements (AREA)

Abstract

A thin optically transparent layer of SnO/SnO2 or of In2O3 is deposited on the upper surface of a substrate of Ge, Si or Ga As with which it forms a hetero-junction. Tin oxide is doped with Sb and the In2O3 where used doped with Sn, Ti or Cd.
FR7134991A 1970-09-30 1971-09-29 Photo-diode - with antireflex layer of transparent semiconductor material forming barrier layer free hetero-junction Withdrawn FR2108102A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702048156 DE2048156A1 (en) 1970-09-30 1970-09-30 Photodiode

Publications (1)

Publication Number Publication Date
FR2108102A1 true FR2108102A1 (en) 1972-05-12

Family

ID=5783856

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7134991A Withdrawn FR2108102A1 (en) 1970-09-30 1971-09-29 Photo-diode - with antireflex layer of transparent semiconductor material forming barrier layer free hetero-junction

Country Status (7)

Country Link
AT (1) AT308857B (en)
CH (1) CH528150A (en)
DE (1) DE2048156A1 (en)
FR (1) FR2108102A1 (en)
IT (1) IT938838B (en)
NL (1) NL7113369A (en)
SE (1) SE361383B (en)

Also Published As

Publication number Publication date
CH528150A (en) 1972-09-15
SE361383B (en) 1973-10-29
DE2048156A1 (en) 1972-04-06
IT938838B (en) 1973-02-10
AT308857B (en) 1973-07-25
NL7113369A (en) 1972-04-05

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Legal Events

Date Code Title Description
ST Notification of lapse