FR2100059A5 - - Google Patents

Info

Publication number
FR2100059A5
FR2100059A5 FR7123812A FR7123812A FR2100059A5 FR 2100059 A5 FR2100059 A5 FR 2100059A5 FR 7123812 A FR7123812 A FR 7123812A FR 7123812 A FR7123812 A FR 7123812A FR 2100059 A5 FR2100059 A5 FR 2100059A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7123812A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR2100059A5 publication Critical patent/FR2100059A5/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
FR7123812A 1970-06-30 1971-06-29 Expired FR2100059A5 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5106770A 1970-06-30 1970-06-30

Publications (1)

Publication Number Publication Date
FR2100059A5 true FR2100059A5 (xx) 1972-03-17

Family

ID=21969125

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7123812A Expired FR2100059A5 (xx) 1970-06-30 1971-06-29

Country Status (9)

Country Link
US (1) US3646406A (xx)
JP (1) JPS5347678B1 (xx)
BE (1) BE768982A (xx)
CA (1) CA922022A (xx)
DE (1) DE2131391C2 (xx)
FR (1) FR2100059A5 (xx)
GB (1) GB1359308A (xx)
NL (1) NL175678C (xx)
SE (1) SE363212B (xx)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873382A (en) * 1971-06-30 1975-03-25 Monsanto Co Process for the preparation of semiconductor materials and devices
US3725749A (en) * 1971-06-30 1973-04-03 Monsanto Co GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES
US3964940A (en) * 1971-09-10 1976-06-22 Plessey Handel Und Investments A.G. Methods of producing gallium phosphide yellow light emitting diodes
US3740622A (en) * 1972-07-10 1973-06-19 Rca Corp Electroluminescent semiconductor device for generating ultra violet radiation
USRE29648E (en) * 1972-12-08 1978-05-30 Monsanto Process for the preparation of electroluminescent III-V materials containing isoelectronic impurities
US4001056A (en) * 1972-12-08 1977-01-04 Monsanto Company Epitaxial deposition of iii-v compounds containing isoelectronic impurities
US3951699A (en) * 1973-02-22 1976-04-20 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a gallium phosphide red-emitting device
JPS5325634B2 (xx) * 1973-04-04 1978-07-27
US3931631A (en) * 1973-07-23 1976-01-06 Monsanto Company Gallium phosphide light-emitting diodes
FR2297494A1 (fr) * 1975-01-07 1976-08-06 Radiotechnique Compelec Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques
US4154630A (en) * 1975-01-07 1979-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
JPS551717B2 (xx) * 1975-01-29 1980-01-16
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase
GB2112140B (en) * 1981-12-16 1985-08-07 Mauser Werke Oberndorf Coordinate measuring machine
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
US5707891A (en) * 1989-04-28 1998-01-13 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode
DE19537542A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Lichtemittierende Diode
US8314566B2 (en) 2011-02-22 2012-11-20 Quarkstar Llc Solid state lamp using light emitting strips
US8835930B2 (en) * 2011-06-28 2014-09-16 Hitachi Metals, Ltd. Gallium nitride rectifying device
JP7092968B2 (ja) 2018-09-22 2022-06-29 豊田合成株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462320A (en) * 1966-11-21 1969-08-19 Bell Telephone Labor Inc Solution growth of nitrogen doped gallium phosphide

Also Published As

Publication number Publication date
JPS5347678B1 (xx) 1978-12-22
SE363212B (xx) 1974-01-07
CA922022A (en) 1973-02-27
NL175678C (nl) 1984-12-03
NL175678B (nl) 1984-07-02
BE768982A (fr) 1971-11-03
DE2131391C2 (de) 1983-07-28
US3646406A (en) 1972-02-29
DE2131391A1 (de) 1972-01-05
NL7108967A (xx) 1972-01-03
GB1359308A (en) 1974-07-10

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