FR2099638A1 - Rod-shaped crystals prodn - eg of zinc tungstate suppressing thermal variations with protective plate - Google Patents

Rod-shaped crystals prodn - eg of zinc tungstate suppressing thermal variations with protective plate

Info

Publication number
FR2099638A1
FR2099638A1 FR7127659A FR7127659A FR2099638A1 FR 2099638 A1 FR2099638 A1 FR 2099638A1 FR 7127659 A FR7127659 A FR 7127659A FR 7127659 A FR7127659 A FR 7127659A FR 2099638 A1 FR2099638 A1 FR 2099638A1
Authority
FR
France
Prior art keywords
rod
prodn
shaped crystals
protective plate
thermal variations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7127659A
Other languages
English (en)
French (fr)
Other versions
FR2099638B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2099638A1 publication Critical patent/FR2099638A1/fr
Application granted granted Critical
Publication of FR2099638B1 publication Critical patent/FR2099638B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7127659A 1970-07-28 1971-07-28 Rod-shaped crystals prodn - eg of zinc tungstate suppressing thermal variations with protective plate Granted FR2099638A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB3654670 1970-07-28
GB3698670 1970-07-30

Publications (2)

Publication Number Publication Date
FR2099638A1 true FR2099638A1 (en) 1972-03-17
FR2099638B1 FR2099638B1 (enExample) 1973-06-29

Family

ID=26263152

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7127659A Granted FR2099638A1 (en) 1970-07-28 1971-07-28 Rod-shaped crystals prodn - eg of zinc tungstate suppressing thermal variations with protective plate

Country Status (4)

Country Link
DE (1) DE2137088A1 (enExample)
FR (1) FR2099638A1 (enExample)
IT (1) IT939745B (enExample)
NL (1) NL7110300A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124938A3 (en) * 1983-05-06 1985-11-27 Philips Patentverwaltung Gmbh Cold crucible for the melting of non metallic inorganic compounds
EP0173764A1 (en) * 1984-08-31 1986-03-12 Gakei Electric Works Co., Ltd. Single crystal growing method and apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528454A1 (fr) * 1982-06-11 1983-12-16 Criceram Creuset modifie pour la methode de cristallisation par goutte pendante

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124938A3 (en) * 1983-05-06 1985-11-27 Philips Patentverwaltung Gmbh Cold crucible for the melting of non metallic inorganic compounds
EP0173764A1 (en) * 1984-08-31 1986-03-12 Gakei Electric Works Co., Ltd. Single crystal growing method and apparatus

Also Published As

Publication number Publication date
DE2137088A1 (de) 1972-02-10
NL7110300A (enExample) 1972-02-01
IT939745B (it) 1973-02-10
FR2099638B1 (enExample) 1973-06-29

Similar Documents

Publication Publication Date Title
GB1319893A (en) Apparatus for growing crystalline bodies from the melt
GB1407785A (en) Process for the production of anhydrous crystalline fructose
GB1476915A (en) Drawing crystals from a melt
CA947186A (en) Method for the solution growth of more perfect semiconductor crystals
GB1303309A (enExample)
CA964968A (en) Method of and apparatus for growing crystals from a solution
YU324772A (en) Process for the stabilization of polyacetals
GB1309347A (en) Production of doped gallium arsenide
ES400635A1 (es) Un metodo para cristalizar fructosa.
MY6900259A (en) Production of dislocation - free single crystals of semiconductor material
GB1011973A (en) Improvements in or relating to methods of growing crystals of semiconductor materials
GB1039638A (en) Phosphors
CA982914A (en) Device for growing crystals from a starting material
CA941716A (en) Technique for the growth of single crystal lead molybdate
YU4275A (en) Process for the crystallization of fructose
SU649299A3 (ru) Устройство дл автоматического управлени процессом выращивани кристаллов при бестигельной зонной плавке
AU459061B2 (en) Method for growing crystalline materials
CA834694A (en) Method of growing rod-shaped dislocation-free monocrystals, particularly of silicon, by crucible-free floating zone melting
GB931692A (en) A process for doping semi-conductor material with boron
GB1377428A (en) Synthetic corundum
Baldoni INVESTIGATION OF THE GROWTH OF TUNGSTEN CARBIDE SINGLE CRYSTALS IN VACUUM BY A MODIFIED CZOCHRALSKI TECHNIQUE.
CA856196A (en) Method for growing crystals
CA845081A (en) Method of growing strain-free single crystals
JPS5276278A (en) Apparatus for preparing long and narrow crystal
AT333241B (de) Vorrichtung zur herstellung von einkristallen nach verneuil

Legal Events

Date Code Title Description
ST Notification of lapse