FR2096511B1 - - Google Patents

Info

Publication number
FR2096511B1
FR2096511B1 FR7123183A FR7123183A FR2096511B1 FR 2096511 B1 FR2096511 B1 FR 2096511B1 FR 7123183 A FR7123183 A FR 7123183A FR 7123183 A FR7123183 A FR 7123183A FR 2096511 B1 FR2096511 B1 FR 2096511B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7123183A
Other versions
FR2096511A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2096511A1 publication Critical patent/FR2096511A1/fr
Application granted granted Critical
Publication of FR2096511B1 publication Critical patent/FR2096511B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR7123183A 1970-06-26 1971-06-25 Expired FR2096511B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5022870A 1970-06-26 1970-06-26

Publications (2)

Publication Number Publication Date
FR2096511A1 FR2096511A1 (fr) 1972-02-18
FR2096511B1 true FR2096511B1 (fr) 1975-08-22

Family

ID=21964071

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7123183A Expired FR2096511B1 (fr) 1970-06-26 1971-06-25

Country Status (6)

Country Link
US (1) US3609476A (fr)
JP (1) JPS5347672B1 (fr)
CA (1) CA926028A (fr)
DE (2) DE2131747C2 (fr)
FR (1) FR2096511B1 (fr)
GB (1) GB1343794A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906545A (en) * 1972-01-24 1975-09-16 Licentia Gmbh Thyristor structure
US3940633A (en) * 1974-07-01 1976-02-24 General Electric Company GTO turn-off circuit providing turn-off gate current pulse proportional to anode current
US4177479A (en) * 1975-09-09 1979-12-04 Bbc Brown Boveri & Company Electrical circuit with a high-frequency thyristor fired by blocking leakage current
JPS5290273A (en) * 1976-01-23 1977-07-29 Hitachi Ltd Semiconductor device
JPS53110386A (en) * 1977-03-08 1978-09-27 Toshiba Corp Semiconductor device
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
US4126879A (en) * 1977-09-14 1978-11-21 Rca Corporation Semiconductor device with ballast resistor adapted for a transcalent device
US4356503A (en) * 1978-06-14 1982-10-26 General Electric Company Latching transistor
JPS55102267A (en) * 1979-01-29 1980-08-05 Meidensha Electric Mfg Co Ltd Semiconductor control element
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
US4320571A (en) * 1980-10-14 1982-03-23 International Rectifier Corporation Stencil mask process for high power, high speed controlled rectifiers
US4361717A (en) * 1980-12-05 1982-11-30 General Electric Company Fluid cooled solar powered photovoltaic cell
US4529999A (en) * 1982-07-09 1985-07-16 Motorola, Inc. Gate controlled switch
DE3468787D1 (en) * 1983-03-31 1988-02-18 Bbc Brown Boveri & Cie Semiconductor power device and method of manufacture
US4801554A (en) * 1983-03-31 1989-01-31 Bbc Brown, Boveri & Company, Limited Process for manufacturing a power semiconductor component
CN102800698B (zh) * 2011-05-24 2015-06-03 杭州汉安半导体有限公司 分段宽变渐开线多指放大门极结构快速晶闸管

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1317754A (fr) * 1961-03-17 1963-05-08
US3356862A (en) * 1964-12-02 1967-12-05 Int Rectifier Corp High speed controlled rectifier
DE1614506A1 (de) * 1967-04-20 1970-03-05 Siemens Ag UEber die Steuerelektrode abschaltbarer Thyristor

Also Published As

Publication number Publication date
JPS5347672B1 (fr) 1978-12-22
CA926028A (en) 1973-05-08
DE2131747C2 (de) 1983-02-17
DE2131747A1 (de) 1971-12-30
GB1343794A (en) 1974-01-16
FR2096511A1 (fr) 1972-02-18
DE7124567U (de) 1972-03-09
US3609476A (en) 1971-09-28

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