FR2095238A1 - Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surface - Google Patents
Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surfaceInfo
- Publication number
- FR2095238A1 FR2095238A1 FR7121369A FR7121369A FR2095238A1 FR 2095238 A1 FR2095238 A1 FR 2095238A1 FR 7121369 A FR7121369 A FR 7121369A FR 7121369 A FR7121369 A FR 7121369A FR 2095238 A1 FR2095238 A1 FR 2095238A1
- Authority
- FR
- France
- Prior art keywords
- diffusion
- liquid
- phase
- doped semiconductor
- gallium doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P32/1408—
-
- H10P32/171—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702029221 DE2029221A1 (de) | 1970-06-13 | 1970-06-13 | Verfahren zum Dotieren eines Halb leiterkorpers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2095238A1 true FR2095238A1 (en) | 1972-02-11 |
| FR2095238B1 FR2095238B1 (enExample) | 1975-08-22 |
Family
ID=5773862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7121369A Granted FR2095238A1 (en) | 1970-06-13 | 1971-06-11 | Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surface |
Country Status (3)
| Country | Link |
|---|---|
| BR (1) | BR7103241D0 (enExample) |
| DE (1) | DE2029221A1 (enExample) |
| FR (1) | FR2095238A1 (enExample) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2973290A (en) * | 1956-07-05 | 1961-02-28 | Gen Electric Co Ltd | Production of semi-conductor bodies by impurity diffusion through station ary interface |
| FR1462591A (fr) * | 1964-12-22 | 1966-04-15 | Siemens Ag | Procédé de dopage de régions dans des corps semi-conducteurs |
| US3445302A (en) * | 1966-12-20 | 1969-05-20 | Western Electric Co | Method for fabricating double-diffused semiconductive devices |
-
1970
- 1970-06-13 DE DE19702029221 patent/DE2029221A1/de active Pending
-
1971
- 1971-05-27 BR BR3241/71A patent/BR7103241D0/pt unknown
- 1971-06-11 FR FR7121369A patent/FR2095238A1/fr active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2973290A (en) * | 1956-07-05 | 1961-02-28 | Gen Electric Co Ltd | Production of semi-conductor bodies by impurity diffusion through station ary interface |
| FR1462591A (fr) * | 1964-12-22 | 1966-04-15 | Siemens Ag | Procédé de dopage de régions dans des corps semi-conducteurs |
| US3445302A (en) * | 1966-12-20 | 1969-05-20 | Western Electric Co | Method for fabricating double-diffused semiconductive devices |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2029221A1 (de) | 1971-12-16 |
| FR2095238B1 (enExample) | 1975-08-22 |
| BR7103241D0 (pt) | 1973-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |