FR2095238A1 - Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surface - Google Patents

Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surface

Info

Publication number
FR2095238A1
FR2095238A1 FR7121369A FR7121369A FR2095238A1 FR 2095238 A1 FR2095238 A1 FR 2095238A1 FR 7121369 A FR7121369 A FR 7121369A FR 7121369 A FR7121369 A FR 7121369A FR 2095238 A1 FR2095238 A1 FR 2095238A1
Authority
FR
France
Prior art keywords
diffusion
liquid
phase
doped semiconductor
gallium doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7121369A
Other languages
French (fr)
Other versions
FR2095238B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2095238A1 publication Critical patent/FR2095238A1/en
Application granted granted Critical
Publication of FR2095238B1 publication Critical patent/FR2095238B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

A semiconductor body, esp., of silicon, is gallium doped by diffusion from a liquid phase containing gallium e.g., by evaporation or from a mechanical application by an aluminium crayon. As compared with diffusion from the gas phase, the life of the minority charge carries is not significantly affected.
FR7121369A 1970-06-13 1971-06-11 Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surface Granted FR2095238A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702029221 DE2029221A1 (en) 1970-06-13 1970-06-13 Method for doping a semiconductor body

Publications (2)

Publication Number Publication Date
FR2095238A1 true FR2095238A1 (en) 1972-02-11
FR2095238B1 FR2095238B1 (en) 1975-08-22

Family

ID=5773862

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7121369A Granted FR2095238A1 (en) 1970-06-13 1971-06-11 Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surface

Country Status (3)

Country Link
BR (1) BR7103241D0 (en)
DE (1) DE2029221A1 (en)
FR (1) FR2095238A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2973290A (en) * 1956-07-05 1961-02-28 Gen Electric Co Ltd Production of semi-conductor bodies by impurity diffusion through station ary interface
FR1462591A (en) * 1964-12-22 1966-04-15 Siemens Ag Method of doping regions in semiconductor bodies
US3445302A (en) * 1966-12-20 1969-05-20 Western Electric Co Method for fabricating double-diffused semiconductive devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2973290A (en) * 1956-07-05 1961-02-28 Gen Electric Co Ltd Production of semi-conductor bodies by impurity diffusion through station ary interface
FR1462591A (en) * 1964-12-22 1966-04-15 Siemens Ag Method of doping regions in semiconductor bodies
US3445302A (en) * 1966-12-20 1969-05-20 Western Electric Co Method for fabricating double-diffused semiconductive devices

Also Published As

Publication number Publication date
BR7103241D0 (en) 1973-04-26
FR2095238B1 (en) 1975-08-22
DE2029221A1 (en) 1971-12-16

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Legal Events

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