FR2095238A1 - Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surface - Google Patents
Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surfaceInfo
- Publication number
- FR2095238A1 FR2095238A1 FR7121369A FR7121369A FR2095238A1 FR 2095238 A1 FR2095238 A1 FR 2095238A1 FR 7121369 A FR7121369 A FR 7121369A FR 7121369 A FR7121369 A FR 7121369A FR 2095238 A1 FR2095238 A1 FR 2095238A1
- Authority
- FR
- France
- Prior art keywords
- diffusion
- liquid
- phase
- doped semiconductor
- gallium doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title abstract 3
- 238000009792 diffusion process Methods 0.000 title abstract 3
- 229910052733 gallium Inorganic materials 0.000 title abstract 3
- 239000007791 liquid phase Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
A semiconductor body, esp., of silicon, is gallium doped by diffusion from a liquid phase containing gallium e.g., by evaporation or from a mechanical application by an aluminium crayon. As compared with diffusion from the gas phase, the life of the minority charge carries is not significantly affected.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19702029221 DE2029221A1 (en) | 1970-06-13 | 1970-06-13 | Method for doping a semiconductor body |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2095238A1 true FR2095238A1 (en) | 1972-02-11 |
FR2095238B1 FR2095238B1 (en) | 1975-08-22 |
Family
ID=5773862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7121369A Granted FR2095238A1 (en) | 1970-06-13 | 1971-06-11 | Gallium doped semiconductor bodies - using diffusion from a liquid - phase on the surface |
Country Status (3)
Country | Link |
---|---|
BR (1) | BR7103241D0 (en) |
DE (1) | DE2029221A1 (en) |
FR (1) | FR2095238A1 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2973290A (en) * | 1956-07-05 | 1961-02-28 | Gen Electric Co Ltd | Production of semi-conductor bodies by impurity diffusion through station ary interface |
FR1462591A (en) * | 1964-12-22 | 1966-04-15 | Siemens Ag | Method of doping regions in semiconductor bodies |
US3445302A (en) * | 1966-12-20 | 1969-05-20 | Western Electric Co | Method for fabricating double-diffused semiconductive devices |
-
1970
- 1970-06-13 DE DE19702029221 patent/DE2029221A1/en active Pending
-
1971
- 1971-05-27 BR BR324171A patent/BR7103241D0/en unknown
- 1971-06-11 FR FR7121369A patent/FR2095238A1/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2973290A (en) * | 1956-07-05 | 1961-02-28 | Gen Electric Co Ltd | Production of semi-conductor bodies by impurity diffusion through station ary interface |
FR1462591A (en) * | 1964-12-22 | 1966-04-15 | Siemens Ag | Method of doping regions in semiconductor bodies |
US3445302A (en) * | 1966-12-20 | 1969-05-20 | Western Electric Co | Method for fabricating double-diffused semiconductive devices |
Also Published As
Publication number | Publication date |
---|---|
DE2029221A1 (en) | 1971-12-16 |
FR2095238B1 (en) | 1975-08-22 |
BR7103241D0 (en) | 1973-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |