FR2094616A5 - - Google Patents

Info

Publication number
FR2094616A5
FR2094616A5 FR7023817A FR7023817A FR2094616A5 FR 2094616 A5 FR2094616 A5 FR 2094616A5 FR 7023817 A FR7023817 A FR 7023817A FR 7023817 A FR7023817 A FR 7023817A FR 2094616 A5 FR2094616 A5 FR 2094616A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7023817A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7023817A priority Critical patent/FR2094616A5/fr
Priority to CH866971A priority patent/CH546412A/fr
Priority to BE768570A priority patent/BE768570A/xx
Priority to GB2926171A priority patent/GB1320834A/en
Priority to IT69174/71A priority patent/IT939723B/it
Priority to DE2131755A priority patent/DE2131755C3/de
Priority to ES392672A priority patent/ES392672A1/es
Application granted granted Critical
Publication of FR2094616A5 publication Critical patent/FR2094616A5/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR7023817A 1970-06-26 1970-06-26 Expired FR2094616A5 (enrdf_load_stackoverflow)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7023817A FR2094616A5 (enrdf_load_stackoverflow) 1970-06-26 1970-06-26
CH866971A CH546412A (fr) 1970-06-26 1971-06-14 Procede de fabrication d'un detecteur de particules a semiconducteur a structure nip et detecteur obtenu par la mise en oeuvre de ce procede.
BE768570A BE768570A (fr) 1970-06-26 1971-06-16 Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede
GB2926171A GB1320834A (en) 1970-06-26 1971-06-22 Process for making windowless nip structure semiconductor particle detectors and the detectors thus made
IT69174/71A IT939723B (it) 1970-06-26 1971-06-25 Procedimento per la fabbricazione di rivelatori di particelle a semi conduttore a struttura nip priva di zona morta e rivelatore ottenuto con il procedimento
DE2131755A DE2131755C3 (de) 1970-06-26 1971-06-25 Verfahren zur Herstellung eines Halbleiter-Teilchendetektors mit NIP-Struktur und Verwendung von danach hergestellten Detektoren
ES392672A ES392672A1 (es) 1970-06-26 1971-06-26 Perfeccionamientos en la fabricacion de detectores de par- ticulas de semi-conductor de estructuras nip.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7023817A FR2094616A5 (enrdf_load_stackoverflow) 1970-06-26 1970-06-26

Publications (1)

Publication Number Publication Date
FR2094616A5 true FR2094616A5 (enrdf_load_stackoverflow) 1972-02-04

Family

ID=9057886

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7023817A Expired FR2094616A5 (enrdf_load_stackoverflow) 1970-06-26 1970-06-26

Country Status (7)

Country Link
BE (1) BE768570A (enrdf_load_stackoverflow)
CH (1) CH546412A (enrdf_load_stackoverflow)
DE (1) DE2131755C3 (enrdf_load_stackoverflow)
ES (1) ES392672A1 (enrdf_load_stackoverflow)
FR (1) FR2094616A5 (enrdf_load_stackoverflow)
GB (1) GB1320834A (enrdf_load_stackoverflow)
IT (1) IT939723B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909564C2 (de) * 1979-03-12 1981-01-08 Geraetewerk Lahr Gmbh, 7630 Lahr Einrichtung zur Schwingungsreduktion in einem Schallplattenspieler

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413529A (en) * 1966-03-08 1968-11-26 Atomic Energy Commission Usa A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
GB1188418A (en) * 1967-04-12 1970-04-15 Centre Nat Rech Scient Improvements in the Preparation of Semiconductor Nuclear Radiation Detectors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3413529A (en) * 1966-03-08 1968-11-26 Atomic Energy Commission Usa A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions
GB1188418A (en) * 1967-04-12 1970-04-15 Centre Nat Rech Scient Improvements in the Preparation of Semiconductor Nuclear Radiation Detectors

Also Published As

Publication number Publication date
GB1320834A (en) 1973-06-20
CH546412A (fr) 1974-02-28
BE768570A (fr) 1971-11-03
ES392672A1 (es) 1975-04-16
DE2131755A1 (de) 1972-01-20
DE2131755B2 (de) 1974-10-17
DE2131755C3 (de) 1975-06-12
IT939723B (it) 1973-02-10

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