FR2088351A1 - - Google Patents

Info

Publication number
FR2088351A1
FR2088351A1 FR7116029A FR7116029A FR2088351A1 FR 2088351 A1 FR2088351 A1 FR 2088351A1 FR 7116029 A FR7116029 A FR 7116029A FR 7116029 A FR7116029 A FR 7116029A FR 2088351 A1 FR2088351 A1 FR 2088351A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7116029A
Other versions
FR2088351B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2088351A1 publication Critical patent/FR2088351A1/fr
Application granted granted Critical
Publication of FR2088351B1 publication Critical patent/FR2088351B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7116029A 1970-05-05 1971-05-04 Expired FR2088351B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3484270A 1970-05-05 1970-05-05

Publications (2)

Publication Number Publication Date
FR2088351A1 true FR2088351A1 (fr) 1972-01-07
FR2088351B1 FR2088351B1 (fr) 1976-07-23

Family

ID=21878945

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7116029A Expired FR2088351B1 (fr) 1970-05-05 1971-05-04

Country Status (5)

Country Link
US (1) US3652907A (fr)
JP (1) JPS4949274B1 (fr)
DE (1) DE2119610A1 (fr)
FR (1) FR2088351B1 (fr)
GB (1) GB1342498A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
DE2702571C3 (de) * 1977-01-22 1982-02-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Kontaktstruktur für ein Vielfach- Halbleiterbauelement
US4291322A (en) * 1979-07-30 1981-09-22 Bell Telephone Laboratories, Incorporated Structure for shallow junction MOS circuits
US5019807A (en) * 1984-07-25 1991-05-28 Staplevision, Inc. Display screen
US4745360A (en) * 1986-05-01 1988-05-17 North American Phillips Corporation, Signetics Division Electron-beam probe system utilizing test device having interdigitated conductive pattern and associated method of using the test device
US5999153A (en) * 1996-03-22 1999-12-07 Lind; John Thomas Soft proofing display
US6208031B1 (en) * 1999-03-12 2001-03-27 Fraivillig Technologies Circuit fabrication using a particle filled adhesive
TWI532191B (zh) * 2013-12-31 2016-05-01 友達光電股份有限公司 薄膜電晶體結構

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3414781A (en) * 1965-01-22 1968-12-03 Hughes Aircraft Co Field effect transistor having interdigitated source and drain and overlying, insulated gate
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
US3423821A (en) * 1965-03-18 1969-01-28 Hitachi Ltd Method of producing thin film integrated circuits

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
US3652907A (en) 1972-03-28
JPS4949274B1 (fr) 1974-12-26
GB1342498A (en) 1974-01-03
DE2119610A1 (de) 1971-11-25
FR2088351B1 (fr) 1976-07-23

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Legal Events

Date Code Title Description
ST Notification of lapse