FR2083429A7 - - Google Patents
Info
- Publication number
- FR2083429A7 FR2083429A7 FR7109808A FR7109808A FR2083429A7 FR 2083429 A7 FR2083429 A7 FR 2083429A7 FR 7109808 A FR7109808 A FR 7109808A FR 7109808 A FR7109808 A FR 7109808A FR 2083429 A7 FR2083429 A7 FR 2083429A7
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10W74/47—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P95/00—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2116170A | 1970-03-19 | 1970-03-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2083429A7 true FR2083429A7 (cg-RX-API-DMAC10.html) | 1971-12-17 |
| FR2083429B3 FR2083429B3 (cg-RX-API-DMAC10.html) | 1973-12-28 |
Family
ID=21802693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7109808A Expired FR2083429B3 (cg-RX-API-DMAC10.html) | 1970-03-19 | 1971-03-19 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3670403A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2111633A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2083429B3 (cg-RX-API-DMAC10.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3919008A (en) * | 1970-12-02 | 1975-11-11 | Hitachi Ltd | Method of manufacturing MOS type semiconductor devices |
| US3793090A (en) * | 1972-11-21 | 1974-02-19 | Ibm | Method for stabilizing fet devices having silicon gates and composite nitride-oxide gate dielectrics |
| US3853496A (en) * | 1973-01-02 | 1974-12-10 | Gen Electric | Method of making a metal insulator silicon field effect transistor (mis-fet) memory device and the product |
| US3909320A (en) * | 1973-12-26 | 1975-09-30 | Signetics Corp | Method for forming MOS structure using double diffusion |
| US3969165A (en) * | 1975-06-02 | 1976-07-13 | Trw Inc. | Simplified method of transistor manufacture |
| US4256514A (en) * | 1978-11-03 | 1981-03-17 | International Business Machines Corporation | Method for forming a narrow dimensioned region on a body |
| US5874766A (en) * | 1988-12-20 | 1999-02-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an oxynitride film |
| KR940009352B1 (ko) * | 1990-07-09 | 1994-10-07 | 가부시끼가이샤 도시바 | 반도체 소자 |
| US6004875A (en) | 1995-11-15 | 1999-12-21 | Micron Technology, Inc. | Etch stop for use in etching of silicon oxide |
| US5830789A (en) * | 1996-11-19 | 1998-11-03 | Integrated Device Technology, Inc. | CMOS process forming wells after gate formation |
| US20030021327A1 (en) * | 2001-07-25 | 2003-01-30 | Murry Stefan J. | Semiconductor surface-emitting laser with integrated photodetector |
| CN115458399B (zh) * | 2022-09-13 | 2025-01-03 | 中晟鲲鹏光电半导体有限公司 | 一种碳化硅晶圆的裂片方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
| US3566518A (en) * | 1967-10-13 | 1971-03-02 | Gen Electric | Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films |
| US3541676A (en) * | 1967-12-18 | 1970-11-24 | Gen Electric | Method of forming field-effect transistors utilizing doped insulators as activator source |
-
1970
- 1970-03-19 US US21161A patent/US3670403A/en not_active Expired - Lifetime
-
1971
- 1971-03-11 DE DE19712111633 patent/DE2111633A1/de active Pending
- 1971-03-19 FR FR7109808A patent/FR2083429B3/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2111633A1 (de) | 1971-09-30 |
| FR2083429B3 (cg-RX-API-DMAC10.html) | 1973-12-28 |
| US3670403A (en) | 1972-06-20 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |