FR2080915A1 - - Google Patents
Info
- Publication number
- FR2080915A1 FR2080915A1 FR7101438A FR7101438A FR2080915A1 FR 2080915 A1 FR2080915 A1 FR 2080915A1 FR 7101438 A FR7101438 A FR 7101438A FR 7101438 A FR7101438 A FR 7101438A FR 2080915 A1 FR2080915 A1 FR 2080915A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US373170A | 1970-01-19 | 1970-01-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2080915A1 true FR2080915A1 (cg-RX-API-DMAC10.html) | 1971-11-26 |
| FR2080915B1 FR2080915B1 (cg-RX-API-DMAC10.html) | 1977-01-28 |
Family
ID=21707308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7101438A Expired FR2080915B1 (cg-RX-API-DMAC10.html) | 1970-01-19 | 1971-01-18 |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE761731A (cg-RX-API-DMAC10.html) |
| CA (1) | CA928863A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2101966A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2080915B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1324972A (cg-RX-API-DMAC10.html) |
| NL (1) | NL7100631A (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3302025A1 (de) * | 1983-01-22 | 1984-07-26 | Telefunken electronic GmbH, 6000 Frankfurt | Verfahren zum herstellen eines epibasistransistors |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59165455A (ja) * | 1983-03-10 | 1984-09-18 | Toshiba Corp | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1541490A (fr) * | 1966-10-21 | 1968-10-04 | Philips Nv | Dispositif semi-conducteur et procédé pour sa fabrication |
-
1970
- 1970-11-27 CA CA099388A patent/CA928863A/en not_active Expired
-
1971
- 1971-01-14 GB GB194171A patent/GB1324972A/en not_active Expired
- 1971-01-16 DE DE19712101966 patent/DE2101966A1/de active Pending
- 1971-01-18 BE BE761731A patent/BE761731A/xx unknown
- 1971-01-18 NL NL7100631A patent/NL7100631A/xx unknown
- 1971-01-18 FR FR7101438A patent/FR2080915B1/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1541490A (fr) * | 1966-10-21 | 1968-10-04 | Philips Nv | Dispositif semi-conducteur et procédé pour sa fabrication |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3302025A1 (de) * | 1983-01-22 | 1984-07-26 | Telefunken electronic GmbH, 6000 Frankfurt | Verfahren zum herstellen eines epibasistransistors |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7100631A (cg-RX-API-DMAC10.html) | 1971-07-21 |
| GB1324972A (en) | 1973-07-25 |
| CA928863A (en) | 1973-06-19 |
| DE2101966A1 (de) | 1971-09-23 |
| BE761731A (fr) | 1971-07-01 |
| FR2080915B1 (cg-RX-API-DMAC10.html) | 1977-01-28 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |