FR2077476A1 - - Google Patents

Info

Publication number
FR2077476A1
FR2077476A1 FR7000385A FR7000385A FR2077476A1 FR 2077476 A1 FR2077476 A1 FR 2077476A1 FR 7000385 A FR7000385 A FR 7000385A FR 7000385 A FR7000385 A FR 7000385A FR 2077476 A1 FR2077476 A1 FR 2077476A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7000385A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMI CONDUCTEURS
Original Assignee
SEMI CONDUCTEURS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMI CONDUCTEURS filed Critical SEMI CONDUCTEURS
Priority to FR7000385A priority Critical patent/FR2077476A1/fr
Priority to US00102382A priority patent/US3737341A/en
Priority to DE2100154A priority patent/DE2100154C3/de
Publication of FR2077476A1 publication Critical patent/FR2077476A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
FR7000385A 1970-01-07 1970-01-07 Withdrawn FR2077476A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7000385A FR2077476A1 (fr) 1970-01-07 1970-01-07
US00102382A US3737341A (en) 1970-01-07 1970-12-29 Novel method of manufacturing protective oxide films,and structures embodying such films
DE2100154A DE2100154C3 (de) 1970-01-07 1971-01-04 Verfahren zum Aufbringen einer Oxyd-Schutzschicht vorbestimmter Form auf eine Oberfläche eines Halbleitersubstrats

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7000385A FR2077476A1 (fr) 1970-01-07 1970-01-07

Publications (1)

Publication Number Publication Date
FR2077476A1 true FR2077476A1 (fr) 1971-10-29

Family

ID=9048676

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7000385A Withdrawn FR2077476A1 (fr) 1970-01-07 1970-01-07

Country Status (3)

Country Link
US (1) US3737341A (fr)
DE (1) DE2100154C3 (fr)
FR (1) FR2077476A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3983284A (en) * 1972-06-02 1976-09-28 Thomson-Csf Flat connection for a semiconductor multilayer structure
JPS5922337B2 (ja) * 1975-09-17 1984-05-25 ニホンアイ ビ− エム カブシキガイシヤ ガス・パネル装置の製造方法
US4496419A (en) * 1983-02-28 1985-01-29 Cornell Research Foundation, Inc. Fine line patterning method for submicron devices
JPS6142140A (ja) * 1984-07-30 1986-02-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 自己整合構造の形成方法
EP0889856B1 (fr) * 1996-03-28 2001-08-22 Corning Incorporated Verres de polarisation comportant des zones integrees non polarisantes
US6171762B1 (en) 1996-03-28 2001-01-09 Corning Incorporated Polarizing glasses having integral non-polarizing regions
US6524773B1 (en) 1996-03-28 2003-02-25 Corning Incorporated Polarizing glasses having integral non-polarizing regions
KR20000005221A (ko) * 1996-04-04 2000-01-25 알프레드 엘. 미첼슨 유리의 수소착색용 불투과성막

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1349608A (fr) * 1963-02-21 1964-01-17 Western Electric Co Décapage de l'aluminium par la technique de réserve
GB1003663A (en) * 1963-06-28 1965-09-08 Ibm Anodizing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1349608A (fr) * 1963-02-21 1964-01-17 Western Electric Co Décapage de l'aluminium par la technique de réserve
GB1003663A (en) * 1963-06-28 1965-09-08 Ibm Anodizing method

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"IEEE TRANSACTIONS ON ELECTRON DEVICES"VOLUME ED-13,NO.5,MAI 1966."A COMPATIBLETECHNIQUE FOR THE FORMATION OF THIN TA FILM RESISTORS ON SILICON INTEGRATED CIRCUITS.M.J.WALKERPAGES 472-477.) *
PAGES 472-477.) *
REVUE AMERICAINE"IEEE TRANSACTIONS ON ELECTRON DEVICES"VOLUME ED-13,NO.5,MAI 1966."A COMPATIBLE *
TECHNIQUE FOR THE FORMATION OF THIN TA FILM RESISTORS ON SILICON INTEGRATED CIRCUITS.M.J.WALKER *

Also Published As

Publication number Publication date
DE2100154B2 (de) 1978-03-23
DE2100154A1 (de) 1971-07-15
DE2100154C3 (de) 1978-11-23
US3737341A (en) 1973-06-05

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse