FR2077332A7 - - Google Patents
Info
- Publication number
- FR2077332A7 FR2077332A7 FR7102461A FR7102461A FR2077332A7 FR 2077332 A7 FR2077332 A7 FR 2077332A7 FR 7102461 A FR7102461 A FR 7102461A FR 7102461 A FR7102461 A FR 7102461A FR 2077332 A7 FR2077332 A7 FR 2077332A7
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US584870A | 1970-01-26 | 1970-01-26 | |
US7519970A | 1970-09-24 | 1970-09-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2077332A7 true FR2077332A7 (de) | 1971-10-22 |
FR2077332B3 FR2077332B3 (de) | 1973-10-19 |
Family
ID=26674840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7102461A Expired FR2077332B3 (de) | 1970-01-26 | 1971-01-26 |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE2103146A1 (de) |
FR (1) | FR2077332B3 (de) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2191267A1 (de) * | 1972-06-28 | 1974-02-01 | Westinghouse Brake Semi Conduc | |
US3975754A (en) * | 1973-12-12 | 1976-08-17 | Societe Generale De Constructions Electriques Et Mecaniques (Alsthom) | Power thyristor having a high triggering speed |
EP0064231A2 (de) * | 1981-04-30 | 1982-11-10 | Kabushiki Kaisha Toshiba | Kompressions-Halbleitervorrichtung |
EP0066850A2 (de) * | 1981-06-05 | 1982-12-15 | Hitachi, Ltd. | Halbleiterschaltungsanordnung |
EP0260471A1 (de) * | 1986-09-16 | 1988-03-23 | BBC Brown Boveri AG | Leistungs-Halbleiterbauelement |
EP0324929A2 (de) * | 1987-12-03 | 1989-07-26 | Mitsubishi Denki Kabushiki Kaisha | Halbleiteranordnung vom Druckverbindungstyp |
EP0470899A1 (de) * | 1990-08-07 | 1992-02-12 | Auxilec | Diode mit Elektroden und Gehäuse zusammengesetzt ohne Lötmittel oder Fassung und Gleichrichterbrücke verwirklicht mit solchen Dioden |
EP0646960A1 (de) * | 1993-10-01 | 1995-04-05 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung mit einem Halbleiterelement ausgestaltet in einer Mesastruktur |
EP0685886A1 (de) * | 1994-05-31 | 1995-12-06 | Kabushiki Kaisha Toshiba | Halbleiteranordnung vom gemischten MOS-Typ |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56131955A (en) * | 1980-09-01 | 1981-10-15 | Hitachi Ltd | Semiconductor device |
-
1971
- 1971-01-23 DE DE19712103146 patent/DE2103146A1/de active Pending
- 1971-01-26 FR FR7102461A patent/FR2077332B3/fr not_active Expired
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2191267A1 (de) * | 1972-06-28 | 1974-02-01 | Westinghouse Brake Semi Conduc | |
US3975754A (en) * | 1973-12-12 | 1976-08-17 | Societe Generale De Constructions Electriques Et Mecaniques (Alsthom) | Power thyristor having a high triggering speed |
EP0064231A2 (de) * | 1981-04-30 | 1982-11-10 | Kabushiki Kaisha Toshiba | Kompressions-Halbleitervorrichtung |
EP0064231A3 (en) * | 1981-04-30 | 1984-12-19 | Kabushiki Kaisha Toshiba | Compression-type semiconductor device |
EP0066850A2 (de) * | 1981-06-05 | 1982-12-15 | Hitachi, Ltd. | Halbleiterschaltungsanordnung |
EP0066850A3 (en) * | 1981-06-05 | 1983-08-17 | Hitachi, Ltd. | Semiconductor switching device |
US4862239A (en) * | 1986-09-16 | 1989-08-29 | Bbc Brown Boveri Ag | Power semiconductor component |
EP0260471A1 (de) * | 1986-09-16 | 1988-03-23 | BBC Brown Boveri AG | Leistungs-Halbleiterbauelement |
CH670334A5 (de) * | 1986-09-16 | 1989-05-31 | Bbc Brown Boveri & Cie | |
EP0324929A3 (de) * | 1987-12-03 | 1990-01-10 | Mitsubishi Denki Kabushiki Kaisha | Halbleiteranordnung vom Druckverbindungstyp |
EP0324929A2 (de) * | 1987-12-03 | 1989-07-26 | Mitsubishi Denki Kabushiki Kaisha | Halbleiteranordnung vom Druckverbindungstyp |
US5047836A (en) * | 1987-12-03 | 1991-09-10 | Mitsubishi Denki Kabushiki Kaisha | Temperature compensating contact to avoid misregistration |
EP0470899A1 (de) * | 1990-08-07 | 1992-02-12 | Auxilec | Diode mit Elektroden und Gehäuse zusammengesetzt ohne Lötmittel oder Fassung und Gleichrichterbrücke verwirklicht mit solchen Dioden |
FR2665817A1 (fr) * | 1990-08-07 | 1992-02-14 | Auxilec | Diode a electrode et a boitier assembles sans soudure ni sertissage, et pont redresseur realise avec de telles diodes. |
US5206793A (en) * | 1990-08-07 | 1993-04-27 | Auxilec | Diode with electrodes and case assembled without soldering or crimping, and rectifier bridge made with such diodes |
EP0646960A1 (de) * | 1993-10-01 | 1995-04-05 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung mit einem Halbleiterelement ausgestaltet in einer Mesastruktur |
BE1007589A3 (nl) * | 1993-10-01 | 1995-08-16 | Philips Electronics Nv | Halfgeleiderinrichting met in mesa-structuur aangebracht halfgeleiderelement. |
US5569952A (en) * | 1993-10-01 | 1996-10-29 | U.S. Philips Corporation | Semiconductor device with a semiconductor element provided in a mesa structure |
EP0685886A1 (de) * | 1994-05-31 | 1995-12-06 | Kabushiki Kaisha Toshiba | Halbleiteranordnung vom gemischten MOS-Typ |
US5539232A (en) * | 1994-05-31 | 1996-07-23 | Kabushiki Kaisha Toshiba | MOS composite type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE2103146A1 (de) | 1971-08-05 |
FR2077332B3 (de) | 1973-10-19 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |