FR2056469A5 - - Google Patents

Info

Publication number
FR2056469A5
FR2056469A5 FR7027882A FR7027882A FR2056469A5 FR 2056469 A5 FR2056469 A5 FR 2056469A5 FR 7027882 A FR7027882 A FR 7027882A FR 7027882 A FR7027882 A FR 7027882A FR 2056469 A5 FR2056469 A5 FR 2056469A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7027882A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Application granted granted Critical
Publication of FR2056469A5 publication Critical patent/FR2056469A5/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulating Bodies (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Inorganic Insulating Materials (AREA)
FR7027882A 1969-08-04 1970-07-29 Expired FR2056469A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84715369A 1969-08-04 1969-08-04

Publications (1)

Publication Number Publication Date
FR2056469A5 true FR2056469A5 (fr) 1971-05-14

Family

ID=25299906

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7027882A Expired FR2056469A5 (fr) 1969-08-04 1970-07-29

Country Status (5)

Country Link
US (1) US3663277A (fr)
JP (1) JPS4923633B1 (fr)
DE (1) DE2038109B2 (fr)
FR (1) FR2056469A5 (fr)
GB (1) GB1250138A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103045A (en) * 1972-07-31 1978-07-25 Rhone-Poulenc, S.A. Process for improving the adhesion of coatings made of photoresistant polymers to surfaces of inorganic oxides
US3868723A (en) * 1973-06-29 1975-02-25 Ibm Integrated circuit structure accommodating via holes
JPS535342A (en) * 1976-07-02 1978-01-18 Hitachi Ltd Ignition device for internal combustion engine
JPS5425178A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture for semiconductor device
US4172907A (en) * 1977-12-29 1979-10-30 Honeywell Information Systems Inc. Method of protecting bumped semiconductor chips
JPS5564468U (fr) * 1979-11-21 1980-05-02
US4630090A (en) * 1984-09-25 1986-12-16 Texas Instruments Incorporated Mercury cadmium telluride infrared focal plane devices having step insulator and process for making same
CA2009518C (fr) * 1990-02-07 2000-10-17 Luc Ouellet Methode de fabrication de dispositifs a semiconducteur par depot d'une couche de spin sur verre
US5334415A (en) * 1992-09-21 1994-08-02 Compaq Computer Corporation Method and apparatus for film coated passivation of ink channels in ink jet printhead
US6592738B2 (en) 1997-01-31 2003-07-15 Elisha Holding Llc Electrolytic process for treating a conductive surface and products formed thereby
US6322687B1 (en) 1997-01-31 2001-11-27 Elisha Technologies Co Llc Electrolytic process for forming a mineral
US6149794A (en) * 1997-01-31 2000-11-21 Elisha Technologies Co Llc Method for cathodically treating an electrically conductive zinc surface
US6599643B2 (en) 1997-01-31 2003-07-29 Elisha Holding Llc Energy enhanced process for treating a conductive surface and products formed thereby
US6153080A (en) * 1997-01-31 2000-11-28 Elisha Technologies Co Llc Electrolytic process for forming a mineral
US6653718B2 (en) 2001-01-11 2003-11-25 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
US6444495B1 (en) * 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
AU2003209010A1 (en) * 2002-02-05 2003-09-02 Elisha Holding Llc Method for treating metallic surfaces and products formed thereby
US20040188262A1 (en) * 2002-02-05 2004-09-30 Heimann Robert L. Method for treating metallic surfaces and products formed thereby
US6967172B2 (en) * 2002-07-03 2005-11-22 Honeywell International Inc. Colloidal silica composite films for premetal dielectric applications

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2539410A (en) * 1944-10-06 1951-01-30 Farnsworth Res Corp Method of forming a glass film on metal
NL283620A (fr) * 1961-09-29 1900-01-01

Also Published As

Publication number Publication date
GB1250138A (fr) 1971-10-20
DE2038109B2 (de) 1973-02-08
DE2038109A1 (de) 1971-04-22
US3663277A (en) 1972-05-16
JPS4923633B1 (fr) 1974-06-17

Similar Documents

Publication Publication Date Title
AU2270770A (fr)
FR2056469A5 (fr)
AU465452B2 (fr)
AU2355770A (fr)
AU442375B2 (fr)
AU470301B1 (fr)
AU5113869A (fr)
AT308690B (fr)
AU470661B1 (fr)
AU410358B2 (fr)
AU5077469A (fr)
CS148421B1 (fr)
AR203167Q (fr)
FR2034265A1 (fr)
AU1036070A (fr)
AU4923469A (fr)
AU4949169A (fr)
CS149296B1 (fr)
AU5079269A (fr)
AU5109569A (fr)
CS148813B1 (fr)
AU5133369A (fr)
AU5228269A (fr)
BE729450A (fr)
AU5066368A (fr)

Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse